Abstract: The present invention provides PD-1 monoclonal antibodies, particularly human monoclonal antibodies of PD-1, which specifically bind to PD-1 with high affinity and comprise a heavy chain and a light chain. The present invention further provides nucleic acid sequence encoding the antibodies of the invention, cloning or expression vectors, host cells and methods for expressing or isolating the antibodies. Immunoconjugates, therapeutic compositions comprising the antibodies of the invention are also provided. The invention also provides methods for treating various cancers with anti-PD-1 antibodies.

Abstract: The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a silicon nitrogen compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a PIP capacitor located. The PIP capacitor includes a first polysilicon layer, a metallic silicide layer, a protective layer, a dielectric layer, and a second polysilicon layer, which have a lower conductive plate pattern and are successively arranged. The method includes: providing a substrate; successively forming a first polysilicon layer, a metallic silicide, and a protective layer on the substrate; transferring a lower conductive plate pattern into the first polysilicon layer, the metallic silicide layer, and the protective layer, thus forming the first polysilicon layer, the metallic silicide layer, and the protective layer having the lower conductive plate pattern; successively forming a dielectric layer and a second polysilicon layer having a lower conductive plate pattern on the protective layer. The capacitance and reliability of the PIP capacitor are improved.

Abstract: The invention provides a vaccine injection, which includes a vaccine and a Traditional Chinese medicinal adjuvant in a mass ratio of 1:0.5-1:10, or a vaccine, a Traditional Chinese medicinal adjuvant and an aluminum adjuvant in a mass ratio of 1:0.5:2.5-1:10:20. The vaccine injection is in the form of powders, and the size of the powders is between 10 and 120 micrometers. The vaccine injection of the present invention is particularly suitable for the needle free injection technology. The invention also provides a preparation method for the vaccine injection.

Abstract: The present invention provides a method of forming a passivation layer of a MOS device, and a MOS device. The method of forming a passivation layer of a MOS device includes: forming a substrate; forming a dielectric on the substrate; patterning the dielectric to expose a part of the substrate; forming a metal on the exposed part of the substrate, and the dielectric; forming a TEOS on the metal; forming a PSG on the TEOS; and forming a nitrogen silicon compound on the PSG. Therefore, the cracks problem of the passivation can be alleviated.

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a substrate and a PIP capacitor located. The PIP capacitor includes a first polysilicon layer, a metallic silicide layer, a protective layer, a dielectric layer, and a second polysilicon layer, which have a lower conductive plate pattern and are successively arranged. The method includes: providing a substrate; successively forming a first polysilicon layer, a metallic silicide, and a protective layer on the substrate; transferring a lower conductive plate pattern into the first polysilicon layer, the metallic silicide layer, and the protective layer, thus forming the first polysilicon layer, the metallic silicide layer, and the protective layer having the lower conductive plate pattern; successively forming a dielectric layer and a second polysilicon layer having a lower conductive plate pattern on the protective layer. The capacitance and reliability of the PIP capacitor are improved.

Abstract: The invention provides a vaccine injection, which includes a vaccine and a Traditional Chinese medicinal adjuvant in a mass ratio of 1:0.5-1:10, or a vaccine, a Traditional Chinese medicinal adjuvant and an aluminum adjuvant in a mass ratio of 1:0.5:2.5-1:10:20. The vaccine injection is in the form of powders, and the size of the powders is between 10 and 120 micrometers. The vaccine injection of the present invention is particularly suitable for the needle free injection technology. The invention also provides a preparation method for the vaccine injection.