Patents by Inventor Zheyao Zhang

Zheyao Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8575947
    Abstract: A first integration capacitor stores charge from a positive signal portion. A second integration capacitor stores charge from negative signal portion. The voltage across the first and second integration capacitors is measured differentially. The presence of a conductive object proximate to a capacitance sensing element is detected based on the measured differential voltage between the first and second integration capacitors.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: November 5, 2013
    Assignee: Cypress Semiconductor Corporation
    Inventors: Paul Walsh, Zheyao Zhang, Viktor Kremin
  • Patent number: 8487639
    Abstract: A charge storage circuit stores charge from a current induced across a capacitive sensing device. The current across the capacitive sensing device is supplied to the charge storage circuit by a current conveying device to generate an output voltage signal. The presence of a conductive object proximate to the capacitive sensing device is detected based on the output voltage signal.
    Type: Grant
    Filed: November 23, 2009
    Date of Patent: July 16, 2013
    Assignee: Cypress Semiconductor Corporation
    Inventors: Paul Walsh, Zheyao Zhang, Viktor Kremin