Patents by Inventor ZHEYUN FENG

ZHEYUN FENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NLDMOS transistor and fabrication method thereof
    Patent number: 9607839
    Abstract: An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor layer having a deep N-type well region formed on the P-type substrate. Further, the NLDMOS transistor also includes at least a P-type body region and an N-type drift region formed in the deep N-type well region; and an N-type heavily doped drain region formed in the N-type drift region. Further, the NLDMOS transistor includes a P-type doped reverse type region formed below the N-type drift region in the deep N-type well region, being physically connected with the first P-type body region, and preventing carriers from escaping between the N-type source region and external devices.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: March 28, 2017
    Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
    Inventors: Zheyun Feng, Ming Wang, Qiancheng Ma, Huifang Song, Yong Cheng
  • NLDMOS TRANSISTOR AND FABRICATION METHOD THEREOF
    Publication number: 20160155795
    Abstract: An N-type Lateral Diffused Metal-Oxide-Semiconductor (NLDMOS) transistor is provided. The NLDMOS transistor comprises a P-type substrate; and a semiconductor layer having a deep N-type well region formed on the P-type substrate. Further, the NLDMOS transistor also includes at least a P-type body region and an N-type drift region formed in the deep N-type well region; and an N-type heavily doped drain region formed in the N-type drift region. Further, the NLDMOS transistor includes a P-type doped reverse type region formed below the N-type drift region in the deep N-type well region, being physically connected with the first P-type body region, and preventing carriers from escaping between the N-type source region and external devices.
    Type: Application
    Filed: November 13, 2015
    Publication date: June 2, 2016
    Inventors: ZHEYUN FENG, MING WANG, QIANCHENG MA, HUIFANG SONG, YONG CHENG