Abstract: A method for manufacturing perovskite-based devices, such as solar cells. In ambient air includes steps of forming a perovskite film on a substrate by spin-coating, the perovskite film having a turbid point when the perovskite film transitions from transparent to turbid in appearance, and dropping an antisolvent on the perovskite film during an antisolvent window having a start time five seconds before the turbid point and an end time one second before the turbid point. The method also includes the step of measuring the current relative humidity of the ambient air at the time of manufacture and adjusting the antisolvent window or optimum drop time of the antisolvent based upon the current relative humidity.

Abstract: A method for manufacturing perovskite-based devices, such as solar cells. In ambient air includes steps of forming a perovskite film on a substrate by spin-coating, the perovskite film having a turbid point when the perovskite film transitions from transparent to turbid in appearance, and dropping an antisolvent on the perovskite film during an antisolvent window having a start time five seconds before the turbid point and an end time one second before the turbid point. The method also includes the step of measuring the current relative humidity of the ambient air at the time of manufacture and adjusting the antisolvent window or optimum drop time of the antisolvent based upon the current relative humidity.

Abstract: A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer.

Abstract: A moisture sensor includes a first electrode, a layer of porous insulating material including a plurality of pores, a film of dielectric sensing material covering the inner surfaces of the plurality of pores and a second electrode.

Abstract: A method of manufacturing a semiconductor structure includes the steps of depositing a layer of semiconductor oxide on a base semiconductor layer, scavenging oxygen from the layer of semiconductor oxide and recrystallizing the oxygen scavenged layer of semiconductor oxide as a semiconductor heteroepitaxy layer.

Abstract: A moisture sensor includes a first electrode, a layer of porous insulating material including a plurality of pores, a film of dielectric sensing material covering the inner surfaces of the plurality of pores and a second electrode.

Abstract: A moisture sensor includes a first electrode (a conductive substrate) having a first sensor portion and a first terminal portion as well as a second electrode having a second sensor portion and a second terminal portion. The moisture sensor also includes a layer of porous dielectric material sandwiched between the first sensor portion and the second sensor portion. Further the moisture sensor includes a layer of dense insulating material sandwiched between the first terminal portion and the second terminal portion. Leads are then connected to the two terminal portions.

Abstract: A moisture sensor includes a first electrode (a conductive substrate) having a first sensor portion and a first terminal portion as well as a second electrode having a second sensor portion and a second terminal portion. The moisture sensor also includes a layer of porous dielectric material sandwiched between the first sensor portion and the second sensor portion. Further the moisture sensor includes a layer of dense insulating material sandwiched between the first terminal portion and the second terminal portion. Leads are then connected to the two terminal portions.