Abstract: A method of fabricating a doped metal oxide film comprising the steps of: (a) providing a semiconductor substrate in a vacuum chamber; (b) generating plasma comprising at least metal (M) , oxygen (O) and dopant ions within said chamber in the presence of an inert carrier gas; (c) forming a doped metal oxide (MO) film on said substrate from said plasma; and (d) controlling, during step (c) , the amount of O ions relative to said dopant ions within said plasma to form at least one of an n-type MO film and a p-type MO film on said substrate. A system for fabricating the doped metal oxide is also disclosed.