Abstract: The present application discloses a method and a model for controlling an energy storage system for rail transit, a device, and a storage medium. The method includes: determining an offline charging-discharging action according to a state of an energy storage system based on an offline algorithm; determining an online charging-discharging action according to the state of the energy storage system based on a deep reinforcement learning algorithm; acquiring a fusion ratio of the offline charging-discharging action to the online charging-discharging action according to a communication delay amount and a delay degree; and fusing the offline charging-discharging action and the online charging-discharging action according to the fusion ratio and outputting a fusion result to the energy storage system.

Abstract: An Android penetration method and device for implementing silent installation based on accessibility services. The method includes: acquiring a second target application by adding a load program to a first target application and adding penetration permissions using an Android decompilation technology; and implementing silent installation of the second target application using an accessibility service technology.

Abstract: A control method, device, apparatus and storage medium for a supercapacitor energy storage device is provided, where the method includes: collecting life characterization parameters of the supercapacitor energy storage device and performing life evaluation to obtain a life evaluation result, inputting the life evaluation result into a constructed fuzzy rule base, and outputting a constraint condition adjustment parameter; obtaining a constraint condition according to the constraint condition adjustment parameter, and optimizing control parameters using a genetic algorithm in conjunction with an optimized objective function to obtain first control parameters; and controlling charging and discharging currents of the supercapacitor energy storage device using a droop control method according to the first control parameters.

Abstract: An effective capacity estimation method and system for super capacitor energy storage systems are provided. The method includes: establishing a nonlinear electrical model of supercapacitor cell and an equivalent electrical model of a supercapacitor system; obtaining the first test data by charging the supercapacitor cell; based on the first test data, setting the initial value of parameters of the nonlinear electrical model of the supercapacitor cell by a preset algorithm; using a least-square method to identify the parameters of the nonlinear electrical model of the supercapacitor cell; obtaining electrical parameters of the equivalent electrical model of the supercapacitor system except the connection resistance parameters, carrying out a charging test of the supercapacitor system to obtain the connection resistance parameters, and estimating an effective capacity of the supercapacitor energy storage system based on the equivalent electrical model of the supercapacitor system after parameter identification.

Abstract: A transfer system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A side of the transfer layer is placed in contact with an outward-facing side of a chiplet during a transfer operation. An optical absorber material is located on at least one of the outward facing side of the chiplet or an inward facing side of the chiplet. An optical energy source is operable to apply optical energy to the optical absorber material through the transfer layer to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet.

Abstract: A transfer apparatus includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A first side of the transfer layer is placed in contact with a chiplet during a transfer operation. An optical absorber material is thermally coupled the transfer layer. An optical energy source is operable to apply optical energy to the optical absorber material to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet. The transfer layer can be reused for repeated transfer operations.

Abstract: A transfer system includes first and second optical energy sources operable to provide a respective first and second optical energy at respective first and second wavelengths. A chiplet has a bonding feature configured to interface with a corresponding bonding feature of a target substrate. At least one of the bonding features absorb at the first wavelength such that applying the first optical energy bonds the chiplet to the target substrate or removes a bond between the chiplet and the target substrate. The system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. An optical absorber absorbs at the second wavelength such that applying the second optical energy heats a region of the transfer layer at a location of the chiplet when removing the chiplets from a source substrate during the transfer operation.

Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

Abstract: The field of this invention is a system and method for digital storage, digital exchange of personal and business valuables from any device, including but not limited to computer, mobile phone, tablet, the cloud or single standalone hardware, using a global unique digital ID, with specific designed app and chip to store and exchange directly in person or remotely.

Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

Abstract: Focusing optics can include optical elements disposed and bonded in a linear arrangement (linear array) in at least two rows. A transparent bonding agent can secure alignment of the at least two rows of the optical elements. Scattering elements can also be disposed in the transparent polymer to cause light diffusion. Diffused or un-diffused light from a semiconductor laser array can then be caused to pass through the optical element and illuminate a target substrate such as an imaging member in a printing system.

Abstract: A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

Abstract: This application discloses a resource pushing method performed by a computer device. The method includes: obtaining a target recommendation model and a preference feature and a candidate resource set corresponding to a target object, the preference feature including at least a channel preference feature and a content preference feature; obtaining at least one target resource from the candidate resource set based on the target recommendation model and the preference feature; and pushing the at least one target resource to the target object. Such a resource pushing process integrates preferences of the target object in different dimensions, so that the target resource pushed to the target object not only conforms to channel preferences of the target object, but also conforms to content references of the target object, which is beneficial to improving the resource pushing effect, and further increasing the click-through rates (CTRs) of the pushed resources.

Abstract: A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow?xhigh?0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Abstract: A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow?xhigh?0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow?xhigh?0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.