Abstract: Bending members having slanted faces to engage folded edge portions of a housing panel, wherein the relative sliding movement between the folded edge portions and the bending members cause bending of each of the folded edge portions to an inwardly slanted angle.

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (34, 46) over an encapsulant (32). The conductive layer includes a combination of a conductive glue (38, 48, 52) and a metal paint (36, 50). A wire loop (30) is coupled to the conductive layer and a leadframe (10).

Abstract: An electromagnetic interference (EMI) and/or electromagnetic radiation shield is formed by forming a conductive layer (34, 46) over an encapsulant (32). The conductive layer includes a combination of a conductive glue (38, 48, 52) and a metal paint (36, 50). A wire loop (30) is coupled to the conductive layer and a leadframe (10).

Abstract: A lead frame for a semiconductor device includes at least one row of contact terminals and a die pad for receiving an integrated circuit die. An isolation material is located between the contact terminals and the die pad. The isolation material electrically isolates adjacent lead fingers from each other and from the die pad. The isolation material also holds the lead fingers in place during a wire bonding operation and thus the bottom of the lead frame does not have to be taped during the assembly process, which saves taping and detaping steps from being performed. The isolation material also prevents resin bleed problems that sometimes occur when using tape. If a sawing step is performed, the saw need only cut through the isolation material instead of a metal, and thus saw blade life is improved.

Abstract: A lead frame (10) for a quad flat non-leaded semiconductor package (606), includes a tie bar (12), a first group of leads (22) extending a first length from the tie bar (12) in a transverse direction (Y), and a second group of leads (24) extending a second length from the tie bar (12) in the transverse direction (Y). The second length is greater than the first length, and leads from the first and second group of leads (22, 24) alternate in a longitudinal direction (X) along the tie bar (12) so that the first and second groups of leads are staggered. The second group of leads (24) is displaced from the first group of leads (22) in a Z-direction (Z) perpendicular to both the transverse (Y) and longitudinal (X) directions. The leads of the first and second groups of leads (22, 24) each have a respective contact terminal (26 and 28) at their distal ends. The contact terminals (26 and 28) each have a contact face (40 and 42) in a contact plane (44).

Abstract: A semiconductor device (20) includes an integrated circuit (22) having a plurality of bonding pads (24) located on a peripheral portion of its top surface and a groove (26) formed in its bottom surface (28). The groove (26) extends from one end to an opposite end of the IC (22). Lead fingers (30) that surround the IC (22) are electrically connected to respective ones of the bonding pads (24) via wirebonding. A mold compound (34) covers the top surfaces of the IC (22) and the lead fingers (30), and the electrical connections. At least the bottom surfaces of the lead fingers (30) and the IC (22) are exposed, except for the groove (26), which is filled with the mold compound (34).

Abstract: A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantially entirely.

Abstract: A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing, layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantially entirely.