Patents by Inventor Zhi-Pan Li

Zhi-Pan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8739082
    Abstract: The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: May 27, 2014
    Inventors: Hua-Yu Liu, Luoqi Chen, Hong Chen, Zhi-Pan Li, Jun Ye, Min-Chun Tsai, Youping Zhang, Yen-Wen Lu, Jiangwei Li
  • Patent number: 8543947
    Abstract: The present invention relates generally to selecting optimum patterns based on diffraction signature analysis, and more particularly to, using the optimum patterns for mask-optimization for lithographic imaging. A respective diffraction map is generated for each of a plurality of target patterns from an initial larger set of target patterns from the design layout. Diffraction signatures are identified from the various diffraction maps. The plurality of target patterns is grouped into various diffraction-signature groups, the target patterns in a specific diffraction-signature group having similar diffraction signature. A subset of target patterns is selected to cover all possible diffraction-signature groups, such that the subset of target patterns represents at least a part of the design layout for the lithographic process. The grouping of the plurality of target patterns may be governed by predefined rules based on similarity of diffraction signature.
    Type: Grant
    Filed: October 28, 2010
    Date of Patent: September 24, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Hua-Yu Liu, Luoqi Chen, Hong Chen, Zhi-Pan Li
  • Publication number: 20120216156
    Abstract: The present invention relates to a method of selecting a subset of patterns from a design, to a method of performing source and mask optimization, and to a computer program product for performing the method of selecting a subset of patterns from a design. According to certain aspects, the present invention enables coverage of the full design while lowering the computation cost by intelligently selecting a subset of patterns from a design in which the design or a modification of the design is configured to be imaged onto a substrate via a lithographic process. The method of selecting the subset of patterns from a design includes identifying a set of patterns from the design related to the predefined representation of the design. By selecting the subset of patterns according to the method, the selected subset of patterns constitutes a similar predefined representation of the design as the set of patterns.
    Type: Application
    Filed: October 26, 2010
    Publication date: August 23, 2012
    Applicant: ASML Netherlands B.V.
    Inventors: Hua-Yu Liu, Luoqi Chen, Hong Chen, Zhi-Pan Li, Jun Ye, Min-Chun Tsai, Youping Zhang, Yen-Wen Lu, Jiangwei Li
  • Publication number: 20110107280
    Abstract: The present invention relates generally to selecting optimum patterns based on diffraction signature analysis, and more particularly to, using the optimum patterns for mask-optimization for lithographic imaging. A respective diffraction map is generated for each of a plurality of target patterns from an initial larger set of target patterns from the design layout. Diffraction signatures are identified from the various diffraction maps. The plurality of target patterns is grouped into various diffraction-signature groups, the target patterns in a specific diffraction-signature group having similar diffraction signature. A subset of target patterns is selected to cover all possible diffraction-signature groups, such that the subset of target patterns represents at least a part of the design layout for the lithographic process. The grouping of the plurality of target patterns may be governed by predefined rules based on similarity of diffraction signature.
    Type: Application
    Filed: October 28, 2010
    Publication date: May 5, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Hua-Yu Liu, Luoqi Chen, Hong Chen, Zhi-Pan Li
  • Patent number: 7764454
    Abstract: Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device.
    Type: Grant
    Filed: July 13, 2005
    Date of Patent: July 27, 2010
    Assignee: The Regents of the University of California
    Inventors: Igor V. Roshchin, Oleg Petracic, Rafael Morales, Zhi-Pan Li, Xavier Batlle, Ivan K. Schuller
  • Publication number: 20080084627
    Abstract: Magnetic materials and methods for using ferromagnetic and antiferromagnetic coupling and exchange bias for binary and multistate magnetic memory device.
    Type: Application
    Filed: July 13, 2005
    Publication date: April 10, 2008
    Inventors: Igor V. Roshchin, Oleg Petracic, Rafael Morales, Zhi-Pan Li, Xavier Batlle, Ivan K. Schuller