Abstract: Software lifecycle management includes, searching, using a processor, historical development data including prior development tasks for a software system. The searching is performed according to a current development task for the software system. A determination is made as to whether the current development task has an affinity with a selected prior development task implemented within the software system. A recommendation is provided for the current development task based upon the selected prior development task.

Abstract: Software lifecycle management includes, searching, using a processor, historical development data including prior development tasks for a software system. The searching is performed according to a current development task for the software system. A determination is made as to whether the current development task has an affinity with a selected prior development task implemented within the software system. A recommendation is provided for the current development task based upon the selected prior development task.

Abstract: Software lifecycle management includes, searching, using a processor, historical development data including prior development tasks for a software system. The searching is performed according to a current development task for the software system. A determination is made as to whether the current development task has an affinity with a selected prior development task implemented within the software system. A recommendation is provided for the current development task based upon the selected prior development task.

Abstract: A semiconductor substrate is first provided. The semiconductor substrate includes a material layer and a patterned photoresist layer disposed on the material layer. Subsequently, a contact etching process is performed on the material layer by utilizing the patterned photoresist layer as an etching mask so to form an etched hole in the material layer. Thereafter, a solvent cleaning process is carried out on the semiconductor substrate by utilizing a cleaning solvent. Next, a water cleaning process is performed on the semiconductor substrate by utilizing deionized water. The temperature of the deionized water is in a range from 30° C. to 99° C.

Abstract: A method of removing a photoresist layer is provided. An ion implantation process has been performed on the photoresist layer to transform a surface of the photoresist layer to a crust and a soft photoresist layer remains within the crust. The method includes performing a first removing step to remove the crust, such that the soft photoresist layer is exposed. Thereafter, a second removing step is performed to remove the soft photoresist layer. The first and the second removing steps are performed in difference chambers, and a temperature for performing the first removing step is lower than that for performing the second removing step and lower than a gasification temperature of a solvent in the soft photoresist layer.

Abstract: A heat dissipation assembly includes a blower holder, a blower, a first heat sink and a second heat sink. The blower includes an inlet and an outlet and is attached to the blower holder. The blower holder is secured to the first heat sink with the inlet of the blower exposed to the first heat sink. The second heat sink is mounted to the blower holder and confronts the outlet of the blower. The second heat sink thermally connects with the first heat sink via heat pipes.

Abstract: A heat dissipation assembly includes a blower holder, a blower, a first heat sink and a second heat sink. The blower includes an inlet and an outlet and is attached to the blower holder. The blower holder is secured to the first heat sink with the inlet of the blower exposed to the first heat sink. The second heat sink is mounted to the blower holder and confronts the outlet of the blower. The second heat sink thermally connects with the first heat sink via heat pipes.