Patents by Inventor Zhi-Sheng XU

Zhi-Sheng XU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming micro-electro-mechanical system (MEMS) device structure
    Patent number: 10131539
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: November 20, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chin-Han Meng, Chih-Hsien Hsu, Chia-Chi Chung, Yu-Pei Chiang, Wen-Chih Chen, Chen-Huang Huang, Zhi-Sheng Xu, Jr-Sheng Chen, Kuo-Chin Liu, Lin-Ching Huang
  • METHOD FOR FORMING MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) DEVICE STRUCTURE
    Publication number: 20180148324
    Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.
    Type: Application
    Filed: October 5, 2017
    Publication date: May 31, 2018
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Han MENG, Chih-Hsien HSU, Chia-Chi CHUNG, Yu-Pei CHIANG, Wen-Chih CHEN, Chen-Huang HUANG, Zhi-Sheng XU, Jr-Sheng CHEN, Kuo-Chin LIU, Lin-Ching HUANG