Patents by Inventor Zhi-Wen Wen Sun
Zhi-Wen Wen Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10604834Abstract: A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %.Type: GrantFiled: March 18, 2015Date of Patent: March 31, 2020Assignee: GUARDIAN GLASS, LLCInventors: Guowen Ding, Brent Boyce, Jeremy Cheng, Muhammad Imran, Jingyu Lao, Minh Huu Le, Daniel Schweigert, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu, Guizhen Zhang
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Patent number: 10207953Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.Type: GrantFiled: October 10, 2017Date of Patent: February 19, 2019Assignee: Guardian Glass, LLCInventors: Guowen Ding, Jeremy Cheng, Tong Ju, Minh Huu Le, Phil Lingle, Daniel Schweigert, Zhi-Wen Wen Sun, Guizhen Zhang
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Publication number: 20180099903Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.Type: ApplicationFiled: October 10, 2017Publication date: April 12, 2018Inventors: Guowen DING, Jeremy CHENG, Tong JU, Minh Huu LE, Phil LINGLE, Daniel SCHWEIGERT, Zhi-Wen Wen SUN, Guizhen ZHANG
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Patent number: 9790127Abstract: Low emissivity panels can include a separation layer of Zn2SnOx between multiple infrared reflective stacks. The low emissivity panels can also include NiNbTiOx as barrier layer. The low emissivity panels have high light to solar gain, color neutral, together with similar observable color before and after a heat treatment process.Type: GrantFiled: March 14, 2013Date of Patent: October 17, 2017Assignees: INTERMOLECULAR, INC., Guardian Glass, LLCInventors: Guowen Ding, Jeremy Cheng, Tong Ju, Minh Huu Le, Phil Lingle, Daniel Schweigert, Zhi-Wen Wen Sun, Guizhen Zhang
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Patent number: 9448345Abstract: A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include an alloy of a first element having high oxygen affinity with a second element having low oxygen affinity. The first element can include Ta, Nb, Zr, Hf, Mn, Y, Si, and Ti, and the second element can include Ru, Ni, Co, Mo, and W, which can have low oxygen affinity property. The alloy barrier layer can reduce optical absorption in the visible range, can provide color-neutral product, and can improve adhesion to the silver layer.Type: GrantFiled: December 21, 2012Date of Patent: September 20, 2016Assignees: Intermolecular, Inc., Guardian Industries Corp.Inventors: Mohd Fadzli Anwar Hassan, Brent Boyce, Guowen Ding, Minh Huu Le, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu
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Patent number: 9321676Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).Type: GrantFiled: May 1, 2015Date of Patent: April 26, 2016Assignee: Intermolecular, Inc.Inventors: Mohd Fadzli Anwar Hassan, Brent Boyce, Guowen Ding, Muhammad Imran, Minh Huu Le, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu
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Patent number: 9296651Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.Type: GrantFiled: June 9, 2014Date of Patent: March 29, 2016Assignees: Intermolecular, Inc., Guardian Industries Corp.Inventors: Mohd Fadzli Anwar Hassan, Richard Blacker, Guowen Ding, Muhammad Imran, Jingyu Lao, Minh Huu Le, Yiwei Lu, Zhi-Wen Wen Sun
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Patent number: 9297938Abstract: A method for making low emissivity panels, comprising forming a patterned layer on a transparent substrate. The patterned layers can offer different color schemes or different decorative appearance styles for the coated panels, or can offer gradable thermal efficiency through the patterned layers.Type: GrantFiled: December 14, 2012Date of Patent: March 29, 2016Assignees: Intermolecular, Inc., Guardian Industries Corp.Inventors: Minh Huu Le, Brent Boyce, Guowen Ding, Mohd Fadzli Anwar Hassan, Zhi-Wen Wen Sun
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Publication number: 20150327366Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack can have improved ductility property.Type: ApplicationFiled: July 23, 2015Publication date: November 12, 2015Inventors: Mohd Fadzli Anwar Hassan, Guowen Ding, Minh Huu Le, Minh Anh Anh Nguyen, Zhi-Wen Wen Sun, Guizhen Zhang
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Patent number: 9178145Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.Type: GrantFiled: April 29, 2014Date of Patent: November 3, 2015Assignee: Intermolecular, Inc.Inventors: Nitin Kumar, Tony P. Chiang, Chi-I Lang, Zhi-Wen Wen Sun, Jinhong Tong
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Patent number: 9121100Abstract: Methods for making conducting stacks includes forming a doped or alloyed silver layer sandwiched between two layers of transparent conductive oxide such as indium tin oxide (ITO). The doped silver or silver alloy layer can be thin, such as between 1.5 to 20 nm and thus can be transparent. The doped silver or silver alloy can provide improved ductility property, allowing the conductive stack to be bendable. The transparent conductive oxide layers can also be thin, allowing the conductive stack to have an improved ductility property.Type: GrantFiled: December 14, 2012Date of Patent: September 1, 2015Assignee: Intermolecular, Inc.Inventors: Mohd Fadzli Anwar Hassan, Guowen Ding, Minh Huu Le, Minh Anh Anh Nguyen, Zhi-Wen Wen Sun, Guizhen Zhang
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Publication number: 20150232376Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).Type: ApplicationFiled: May 1, 2015Publication date: August 20, 2015Inventors: Mohd Fadzli Anwar Hassan, Brent Boyce, Guowen Ding, Muhammad Imran, Minh Huu Le, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu
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Publication number: 20150232378Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.Type: ApplicationFiled: April 30, 2015Publication date: August 20, 2015Inventors: Mohd Fadzli Anwar Hassan, Richard Blacker, Guowen Ding, Jingyu Lao, Minh Huu Le, Yiwei Lu, Minh Anh Anh Nguyen, Zhi-Wen Wen Sun
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Publication number: 20150191815Abstract: A method for making low emissivity panels, including control the composition of a barrier layer formed on a thin conductive silver layer. The barrier structure can include a ternary alloy of nickel, titanium, and niobium, which showed improvements in overall performance than those from binary barrier results. The percentage of nickel can be between 5 and 15 wt %. The percentage of titanium can be between 30 and 50 wt %. The percentage of niobium can be between 40 and 60 wt %.Type: ApplicationFiled: March 18, 2015Publication date: July 9, 2015Inventors: Guowen Ding, Brent Boyce, Jeremy Cheng, Muhammad Imran, Jingyu Lao, Minh Huu Le, Daniel Schweigert, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu, Guizhen Zhang
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Publication number: 20150171260Abstract: Embodiments provided herein describe methods for forming nitrogen-doped zinc telluride, such as for use in photovoltaic devices. The zinc telluride layer is formed using physical vapor deposition (PVD) at a processing temperature of between about 100° C. and about 450° C. in a gaseous environment that includes between about 3% and about 10% by volume of nitrogen gas.Type: ApplicationFiled: December 17, 2013Publication date: June 18, 2015Applicant: Intermolecular Inc.Inventors: Wei Liu, Amir Bayati, Zhi-Wen Wen Sun
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Patent number: 9052456Abstract: A bi-layer seed layer can exhibit good seed property for an infrared reflective layer, together with improved thermal stability. The bi-layer seed layer can include a thin zinc oxide layer having a desired crystallographic orientation for a silver infrared reflective layer disposed on a bottom layer having a desired thermal stability. The thermal stable layer can include aluminum, magnesium, or bismuth doped tin oxide (AlSnO, MgSnO, or BiSnO), which can have better thermal stability than zinc oxide but poorer lattice matching for serving as a seed layer template for silver (111).Type: GrantFiled: March 12, 2013Date of Patent: June 9, 2015Assignees: Intermolecular, Inc., Guardian Industries Corp.Inventors: Mohd Fadzli Anwar Hassan, Brent Boyce, Guowen Ding, Muhammad Imran, Minh Huu Le, Zhi-Wen Wen Sun, Yu Wang, Yongli Xu
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Patent number: 9019483Abstract: Methods are provided to use data obtained from a single wavelength ellipsometer to determine the refractive index of materials as a function of wavelength for thin conductive films. The methods may be used to calculate the refractive index spectrum as a function of wavelength for thin films of metals, and conductive materials such as conductive metal nitrides or conductive metal oxides.Type: GrantFiled: December 27, 2012Date of Patent: April 28, 2015Assignee: Intermolecular, Inc.Inventors: Guowen Ding, Brent Boyce, Mohd Fadzli Anwar Hassan, Minh Huu Le, Zhi-Wen Wen Sun, Yu Wang
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Patent number: 8961814Abstract: Methods and formulations for the selective etching of etch stop layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution. Methods and formulations for the selective etching of molybdenum-based and/or copper-based source/drain electrode layers deposited above metal-based semiconductor layers used in the manufacture of TFT-based display devices are presented. The formulations are based on an alkaline solution.Type: GrantFiled: December 18, 2013Date of Patent: February 24, 2015Assignee: Intermolecular, Inc.Inventors: Jeroen Van Duren, Zhi-Wen Wen Sun
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Patent number: 8865518Abstract: Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.Type: GrantFiled: June 4, 2013Date of Patent: October 21, 2014Assignee: Intermolecular, Inc.Inventors: Nitin Kumar, Tony P. Chiang, Chi-I Lang, Zhi-Wen Wen Sun, Jihong Tong
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Publication number: 20140287254Abstract: A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.Type: ApplicationFiled: June 9, 2014Publication date: September 25, 2014Inventors: Mohd Fadzli Anwar Hassan, Richard Blacker, Guowen Ding, Muhammad Imran, Jingyu Lao, Minh Huu Le, Yiwei Lu, Zhi-Wen Wen Sun