Abstract: The present invention provides an induction type oil debris signal monitoring and identification system, which comprises an induction type oil debris sensor, used to detect small electromagnetic changes in the oil and output a monitoring signal after processing through a signal processing circuit; a bubble and debris classification and identification network module, used to analyze whether an abnormal amplitude signal in the monitoring signal contains bubbles or not so as to prevent the bubbles from being c as debris, and a two-level debris signal analysis network module, used to analyze the monitoring signal and determine the size and the quantity of debris.

Abstract: The present invention provides an induction type oil debris signal monitoring and identification system, which comprises an induction type oil debris sensor, used to detect small electromagnetic changes in the oil and output a monitoring signal after processing through a signal processing circuit; a bubble and debris classification and identification network module, used to analyze whether an abnormal amplitude signal in the monitoring signal contains bubbles or not so as to prevent the bubbles from being c as debris, and a two-level debris signal analysis network module, used to analyze the monitoring signal and determine the size and the quantity of debris.

Abstract: A display method, an electronic device, and a storage medium, which relate to a field of natural language processing and a field of display. The display method includes: acquiring a content to be displayed; extracting a target term from the content using a term extraction rule; acquiring an annotation information for at least one target term, responsive to an extraction of the at least one target term; and displaying the annotation information for the at least one target term and the content.

Abstract: The present disclosure relates to methods and apparatuses. According to some embodiments of the disclosure, a method includes: receiving a first buffer status report at a communication device; and triggering a pre-emptive buffer status report based on the first buffer status report if a trigger condition is met.

Abstract: A text processing method is provided. The method includes: a first probability value of each candidate character of a plurality of candidate characters corresponding to a target position is determined based on character feature information corresponding to the target position in a text fragment to be processed, wherein the character feature information is determined based on a context at the target position in the text fragment to be processed; a second probability value of each candidate character of the plurality of candidate characters is determined based on a character string including the candidate character and at least one character in at least one position in the text fragment to be processed adjacent to the target position; and a correction character at the target position is determined based on the first probability value and the second probability value of each candidate character of the plurality of candidate characters.

Abstract: Methods and apparatuses for NBIoT frequency hopping are disclosed. A method comprises receiving a signal on a first number of frequency carriers, the signal switches among the first number of frequency carriers every a second number of time unit, wherein, the second number is configured by higher layer signaling, and the second number is determined by at least one of a subcarrier spacing of the signal, a scaling factor, a resource unit size of the signal, a subcarrier allocation.

Abstract: A wiring substrate includes a substrate and connection wires. At least one connection wire including a first connection end and another at least one connection wire including a second connection end, together define at least one bonding pad group. A bonding pad group is located in a region where a pair of first and second connection ends proximate to each other are located, and includes: at least one first sub-bonding pad, which is a portion of the first connection end, and at least two second sub-bonding pads, which are a portion of the second connection end. In the at least one first sub-bonding pad and the at least two second sub-bonding pads, a first sub-bonding pad is arranged adjacent to a second sub-bonding pad along a first direction, and arranged adjacent to another second sub-bonding pad along a second direction intersecting the first direction.

Abstract: Embodiments of the present application provide a MEMS solenoid transformer, comprising a silicon substrate, a soft magnetic core, a first solenoid and a second solenoid; wherein, the soft magnetic core is wrapped inside the silicon substrate, the silicon substrate is provided with a first spiral channel and a second spiral channel, and two opposite sides of the soft magnetic core respectively pass through a center of the first spiral channel and a center of the second spiral channel; the first solenoid and the second solenoid are respectively disposed in the first spiral channel and the second spiral channel. By disposing the soft magnetic core, the first solenoid and the second solenoid of the transformer inside the silicon substrate completely, the thickness of the silicon substrate is fully utilized, and the obtained transformer has a larger winding cross-sectional area and a higher magnetic flux, increasing the inductance value of the transformer.

Abstract: An embodiment includes a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein. The method also includes forming a redistribution via and a redistribution pad over the first interconnect structure, the redistribution via and the redistribution pad being electrically coupled to at least one of the metallization patterns of the first interconnect structure, the redistribution via and the redistribution pad having a same material composition. The method also includes forming a warpage control dielectric layer over the redistribution pad. The method also includes forming a bond via and a bond pad over the redistribution pad, the bond pad being in the warpage control dielectric layer, the bond via being electrically coupled to the redistribution pad.

Abstract: A client application in a rich execution environment sends a registration instruction of a secure memory to a trusted application in a trusted execution environment, where the registration instruction carries a memory address. Based on the registration instruction, a trusted application calls a registration interface of an operating system in a trusted execution environment, and sends a registration request of the secure memory to a processor trusted framework unit, so that the processor trusted framework unit updates, based on the registration request, an attribute of memory space corresponding to the memory address to a secure attribute.

Abstract: A silicon powder forming method, a silicon block, and a use thereof are provided, which relates to technical field of single crystal growth. The silicon powder forming method according to the present application includes: placing a mold filled silicon powder in a condition for first pressure P1 for a first pressure time T1 to obtain a silicon block, wherein the first pressure P1 and the first pressure time T1 satisfy: 50 MPa?P1?600 MPa, 7 min?T1?15 min. By pressure control, the molded silicon block is easily removed from the mold without crushing dust. The silicon block obtained is easy to crush upon charging, and the particle size distribution of the crushed silicon block is easy to control, resulting in raising less. The silicon block obtained can be directly used for production of Czochralski single crystal, and the charge density is increased to 0.18 g/cm3˜0.25 g/cm3.

Abstract: The present application provides a battery and a power consuming device. The battery includes: a battery module; and a case having a receiving cavity for receiving the battery module, wherein the case does not extend beyond an upper end face of the battery module in a height direction of the battery. In the technical solution of the present application, the case does not extend beyond the upper end face of the battery module, that is, the case does not completely wrap and enclose the battery module.

Abstract: The present application discloses a battery and a power consuming device. The battery includes: a battery cell; a first case body including a first end wall and a first side wall; and a second case body, the second case body and the first case body being connected to each other to jointly enclose a closed space for receiving the battery cell, the second case body including a second end wall, the second end wall being arranged opposite to the first end wall in a first direction, the second end wall having a first side face in a second direction, and the first direction intersecting with the second direction; wherein the first side wall has one end connected to the first end wall and the other end connected to the first side face.

Abstract: A charging method of silicon material and a preparation method for single crystal are provided. The charging method includes: disposing the first material layer in the crucible; and disposing a second material layer on a side of the first material layer away from a bottom of the crucible, to cover the first material layer during vacuuming. The method for preparing a single crystal, using the silicon charging method described above. The preparation method for single crystal used the charging method for silicon material includes: covering a pot lid on the crucible to define a closed crucible body, and vacuuming the closed crucible body; lifting the closed crucible body into a single crystal furnace, and relieving pressure from the closed crucible body.

Abstract: A silicon powder molding method, a silicon block, and their applications in the field of single crystal growth technology are provided. The silicon powder molding method of this application includes the following steps: placing a mold filled with silicon powder under a first pressure P1 condition, maintaining the first pressure condition P1 for a continuous duration of a first pressure time T1, and satisfying 50 MPa?P1?600 MPa, 7 minutes ?T1?15 minutes to obtain a silicon block. A medium applying the first pressure P1 is a liquid. Through pressure control, the molded silicon block is easily removed from the mold without breaking and generating dust. The silicon block is easy to crush when filling and has a controllable particle size distribution after crushing. The silicon block can be directly used for the production of Czochralski grown single crystals, increasing a loading density to 0.18 g/cm3˜0.25 g/cm3.

Abstract: The present application provides a processing method of a metal composite structure including a first metal layer and a second metal layer stacked on the first metal layer. The processing method includes the steps of defining a first through hole in the first metal layer, and drilling in the first through hole toward the second metal layer to form a traction hole in the second metal layer. Then, hot melt drilling is performed on a surface of the second metal layer away from the first metal layer toward the first through hole, thereby causing the second metal layer to crack under a traction force of the traction hole to form a second through hole, and a portion of the second metal layer to be melted and squeezed to form a bushing which adheres to at least a portion of a sidewall of the first through hole.

Abstract: The present invention provides a polymer molecule, a monomeric structure and a polymeric structure comprising same, a related product, a preparation method, and uses. A polymer blocking the binding to a receptor is formed by the polymerization effect of the polymer molecule, thus effectively increasing the binding capability with respect to a virus. The polymer molecule is characterized in that: multiple binding-blocking molecular units used for blocking the binding between the virus and a cell receptor are polymerized into the polymeric structure.

Abstract: A magnetic tunnel junction (MTJ) structure and a memory cell are provided. The MTJ includes a barrier layer, a free layer and a metal oxide cap layer. The free layer is disposed on the barrier layer. The metal oxide cap layer is disposed on the free layer. The metal oxide cap layer has a first surface and a second surface opposite to the first surface. The first surface of the metal oxide cap layer is in contact with the free layer. In a direction of a thickness of the metal oxide cap layer, both of an oxygen concentration at the first surface of the metal oxide cap layer and an oxygen concentration at the second surface of the metal oxide cap layer are higher than an oxygen concentration in a middle portion of the metal oxide cap layer.

Abstract: The present invention describes an electric-thermal-hydrogen multi-energy device planning method for zero energy buildings, including the following specific steps: firstly, constructing operation constraints of electric and thermal devices in the zero energy buildings; secondly, constructing operation constraints of hydrogen devices including the electrolyzer, the fuel cell and the hydrogen storage device; then, in view of constraints on annual zero energy of the buildings, establishing the robust electric-thermal-hydrogen multi-energy device planning model considering source-load uncertainties; and finally, solving the robust electric-thermal-hydrogen multi-energy device planning model of the zero energy buildings by adopting an alternating optimization procedure based column-and-constraint generation algorithm.