Patents by Inventor Zhi-Yong Chang

Zhi-Yong Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for reducing a low volatility byproduct from a wafer surface following an etching process
    Patent number: 7018929
    Abstract: A method for in-situ reduction of volatile residual contamination on a semiconductor process wafer following a plasma etching process including providing an ambient controlled chamber for accepting transfer of a semiconductor process wafer under controlled ambient conditions following a plasma etching process; providing a heat exchange surface disposed with the ambient controlled chamber in heat exchange relationship with means for heating the heat exchange surface; transferring a semiconductor process wafer having volatile residual contamination under controlled ambient conditions to the ambient controlled chamber; mounting the semiconductor process wafer in heat exchange relationship with the heat exchange surface; and, heating in-situ the heat exchange surface for a time period to thereby heat the semiconductor process wafer to vaporize the volatile residual contamination on the semiconductor process wafer while simultaneously removing a resulting vapor from the ambient controlled chamber.
    Type: Grant
    Filed: July 2, 2002
    Date of Patent: March 28, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Yei-Ren Chen, Hung-Wen Chen, Chi-How Wu, Zhi-Yong Chang
  • Method for reducing a low volatility byproduct from a wafer surface following an etching process
    Publication number: 20040005784
    Abstract: A method for in-situ reduction of volatile residual contamination on a semiconductor process wafer following a plasma etching process including providing an ambient controlled chamber for accepting transfer of a semiconductor process wafer under controlled ambient conditions following a plasma etching process; providing a heat exchange surface disposed with the ambient controlled chamber in heat exchange relationship with means for heating the heat exchange surface; transferring a semiconductor process wafer having volatile residual contamination under controlled ambient conditions to the ambient controlled chamber; mounting the semiconductor process wafer in heat exchange relationship with the heat exchange surface; and, heating in-situ the heat exchange surface for a time period to thereby heat the semiconductor process wafer to vaporize the volatile residual contamination on the semiconductor process wafer while simultaneously removing a resulting vapor from the ambient controlled chamber.
    Type: Application
    Filed: July 2, 2002
    Publication date: January 8, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.,
    Inventors: Yei-Ren Chen, Hung-Wen Chen, Chi-How Wu, Zhi-Yong Chang