Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Abstract: An optical device includes a range finding module. The range finding module includes a first light condenser unit, a light emitting unit and a light receiving unit. The first light condenser unit defines an optical axis and a hole disposed along the optical axis. The first light condenser unit, the light emitting unit and the light receiving unit are sequentially arranged along the optical axis. The light is emitted by the light emitting unit, passes through the hole, reaches an object, is reflected by the object, is converged by the first light condenser unit and is received by the light receiving unit to generate an electrical signal.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: A surface shielding assembly for LED packaging, including: an LED luminescent module (1), a sealing member (2), and a reflective layer (3). The LED luminescent module (1) is encapsulated within the sealing member (2). The sealing member (2) has a plurality of light emergent surfaces. A reflective layer (3) is at least arranged on a light emergent surface facing the LED luminescent module (1). The reflective layer (3) is capable of partially or totally reflecting light rays emitting from the LED luminescent module (1) to other light emergent surfaces.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: The present disclosure relates to polar decoding methods and apparatus. One example method includes obtaining a polar code sequence, determining at least one first information bit length corresponding to a code length of the polar code sequence, and decoding the polar code sequence based on blind detection by using the code length and the at least one first information bit length. The at least one first information bit length is a part of a preset information bit length set corresponding to the code length. A remaining part of the preset information bit length set is at least one second information bit length. The at least one second information bit length is excluded from being used for the blind detection. Each second information bit length is less than one or more information bit lengths in the at least one first information bit length.

Abstract: Provided is a semiconductor encapsulation structure, including: a device base (1) and a cover plate (2). The device base is provided with a cavity (11) for accommodating a chip (3). The device base is further provided with a cover-plate sintered layer (12). The cover-plate sintered layer is metallized. The cover plate matches the device base. The cover plate is provided with a base sintered layer (22). The base sintered layer is also metallized. The cover plate is connected to the base by sintering. The cover plate is connected to the base by sintering, so that low-temperature connection is achieved, thereby avoiding damage to the chip and electronic components in the base caused by high connection temperature. Furthermore, encapsulating costs are greatly reduced while ensuring connection reliability.

Abstract: Provided is a semiconductor encapsulation structure, including: a device base (1) and a cover plate (2). The device base is provided with a cavity (11) for accommodating a chip (3). The device base is further provided with a cover-plate sintered layer (12). The cover-plate sintered layer is metallized. The cover plate matches the device base. The cover plate is provided with a base sintered layer (22). The base sintered layer is also metallized. The cover plate is connected to the base by sintering. The cover plate is connected to the base by sintering, so that low-temperature connection is achieved, thereby avoiding damage to the chip and electronic components in the base caused by high connection temperature. Furthermore, encapsulating costs are greatly reduced while ensuring connection reliability.

Abstract: The present disclosure relates to polar decoding methods and apparatus. One example method includes obtaining a polar code sequence, determining at least one first information bit length corresponding to a code length of the polar code sequence, and decoding the polar code sequence based on blind detection by using the code length and the at least one first information bit length. The at least one first information bit length is a part of a preset information bit length set corresponding to the code length. A remaining part of the preset information bit length set is at least one second information bit length. The at least one second information bit length is excluded from being used for the blind detection. Each second information bit length is less than one or more information bit lengths in the at least one first information bit length.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: An LED frame, a manufacture method thereof and an LED device are disclosed. A transparent insulating protection layer is prepared on the metal material layer of the surface of the LED frame by a process such as vapor deposition, sputtering, vacuum plating, etc., so that the metal material layer can be prevented from making contact with the external environment. The transparent insulating protection layer is a transparent inorganic material layer and the metal material layer is a silver layer or an aluminum layer.

Abstract: A LC compound and a LC mixture are provided. The LC mixture includes a compound represented by (I) and at least one compound selected from a group consisting of compounds represented by (II) to (IV): in which X1 is F, —Cl, —CF3, or —OCF3; R, R11, and R12 are independently H, a C1-C15 alkyl group, or a C2-C15 alkenyl group; A1 is 1,4-phenylene; A11, A12, A13, and A14 are independently selected from a group consisting of 1,4-phenylene, 1,4-cyclohexylene, and 2,5-tetrahydropyranylene; at least one of A2, A3, and A4 is 2,5-indanylene, and the others are independently selected from a group consisting of 1,4-phenylene, 1,4-cyclohexylene, and 2,5-tetrahydropyranylene; L1 is —F2CO—; Z11, Z12, and Z13 are independently a single bond, —O—, —F2CO—, or —COO—; m is 1; n, o and p are independently 0, 1, 2 or 3, and n+o+p?3.

Abstract: A LC compound and a LC mixture are provided. The LC mixture includes a compound represented by (I) and at least one compound selected from a group consisting of compounds represented by (II) to (IV): in which X1 is F, —Cl, —CF3, or —OCF3; R, R11, and R12 are independently H, a C1-C15 alkyl group, or a C2-C15 alkenyl group; A1 is 1,4-phenylene; A11, A12, A13, and A14 are independently selected from a group consisting of 1,4-phenylene, 1,4-cyclohexylene, and 2,5-tetrahydropyranylene; at least one of A2, A3, and A4 is 2,5-indanylene, and the others are independently selected from a group consisting of 1,4-phenylene, 1,4-cyclohexylene, and 2,5-tetrahydropyranylene; L1 is —F2CO—; Z11, Z12, and Z13 are independently a single bond, —O—, —F2CO—, or —COO—; m is 1; n, o and p are independently 0, 1, 2 or 3, and n+o+p?3.