Patents by Inventor Zhi-You Ke

Zhi-You Ke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method of semiconductor device and semiconductor processing system
    Patent number: 11899368
    Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PROCESSING SYSTEM
    Publication number: 20220382161
    Abstract: A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
  • Manufacturing method of semiconductor device and semiconductor processing system
    Patent number: 11454891
    Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
    Type: Grant
    Filed: July 12, 2021
    Date of Patent: September 27, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PROCESSING SYSTEM
    Publication number: 20210341843
    Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
  • Manufacturing method of semiconductor device and semiconductor processing system
    Patent number: 11061333
    Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
    Type: Grant
    Filed: February 26, 2018
    Date of Patent: July 13, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
  • MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR PROCESSING SYSTEM
    Publication number: 20190146348
    Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
    Type: Application
    Filed: February 26, 2018
    Publication date: May 16, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin