Abstract: The present application relates to devices and components including apparatuses, systems, and methods for technologies for packet framing for application data unit transmission in wireless networks.

Abstract: The present application relates to devices and components including apparatus, systems, and methods for secured user equipment communications over a user equipment relay. In some embodiments, symmetric or asymmetric encryption may be used for the secured user equipment communications.

Abstract: A Luneberg lens antenna with a position-electrically adjustable feed includes: a reflecting plate, a feed, a Luneberg lens, and a position adjusting mechanism. The position adjusting mechanism includes a mounting plate, a motor, a guide rail, a sliding block, a connecting base, a screw and a moving base. A position of the mounting plate is relatively fixed to a position of the Luneberg lens. The guide rail is mounted on the mounting plate. Both ends of the screw are rotationally mounted on the mounting plate. The motor is fixed on the mounting plate and configured for driving the screw to rotate. The moving base is provided with a screw hole, and the screw hole of the moving base is in threaded connection with the screw. The present disclosure has characteristics of good stability in adjusting a feed position, convenient assembly and low production cost.

Abstract: A Luneberg lens antenna with a position-electrically adjustable feed includes: a reflecting plate, a feed, a Luneberg lens, and a position adjusting mechanism. The position adjusting mechanism includes a mounting plate, a motor, a guide rail, a sliding block, a connecting base, a screw and a moving base. A position of the mounting plate is relatively fixed to a position of the Luneberg lens. The guide rail is mounted on the mounting plate. Both ends of the screw are rotationally mounted on the mounting plate. The motor is fixed on the mounting plate and configured for driving the screw to rotate. The moving base is provided with a screw hole, and the screw hole of the moving base is in threaded connection with the screw. The present disclosure has characteristics of good stability in adjusting a feed position, convenient assembly and low production cost.

Abstract: A flash device and a manufacturing method thereof. The method comprises: providing a substrate, and forming, on the substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer; wherein the floating gate polycrystalline layer is formed on the substrate, the floating gate oxide layer is formed between the substrate and the floating gate polycrystalline layer, a substrate region at one side of the floating gate polycrystalline layer is a first substrate region, a substrate region at the other side of the floating gate polycrystalline layer is a second substrate region; forming, on the tunneling oxide layer, located in the first substrate region, a continuous non-conductive layer, the non-conductive layer extending to the tunneling oxide layer at a side wall of the floating gate polycrystalline layer; and forming, on the tunneling oxide layer, a polysilicon layer.

Abstract: Isoorientin analogues and related compounds that inhibit glycogen synthase kinase-3? activity are provided as are methods of using these compounds in the treatment of cognitive, neurodegenerative or neurological diseases or conditions, as well as cancer, obesity, diabetes, inflammatory or autoimmune disease, cardiovascular disorder, metabolic syndrome X, hair loss, severe acute respiratory syndrome coronavirus, cocaine addiction, dental caries, bone loss and glaucoma.

Abstract: A manufacturing method for a flash device. A manufacturing method for a flash device, comprising: providing a substrate; forming sequentially, on the substrate, a floating gate (FG) oxide layer, an FG polycrystalline layer, and an FG mask layer; etching, at the FG location region, the FG polycrystalline layer and the FG mask layer, forming a window on the FG mask layer, and forming a trench on the FG polycrystalline layer, the window being communicated with the trench; performing second etching of the side wall of the window of the FG mask layer, enabling the width of the trench located on the FG polycrystalline layer to be less than the width of the secondarily-etched window located on the FG mask layer; and oxidizing the FG polycrystalline layer, enabling the oxide to fill the trench to form a field oxide layer; and etching an FG having sharp angles.

Abstract: A flash device and a manufacturing method thereof. The method comprises: providing a substrate, and forming, on the substrate, a floating gate polycrystalline layer, a floating gate oxide layer, and a tunneling oxide layer; wherein the floating gate polycrystalline layer is formed on the substrate, the floating gate oxide layer is formed between the substrate and the floating gate polycrystalline layer, a substrate region at one side of the floating gate polycrystalline layer is a first substrate region, a substrate region at the other side of the floating gate polycrystalline layer is a second substrate region; forming, on the tunneling oxide layer, located in the first substrate region, a continuous non-conductive layer, the non-conductive layer extending to the tunneling oxide layer at a side wall of the floating gate polycrystalline layer; and forming, on the tunneling oxide layer, a polysilicon layer.

Abstract: Isoorientin analogues and related compounds that inhibit glycogen synthase kinase-3? activity are provided as are methods of using these compounds in the treatment of cognitive, neurodegenerative or neurological diseases or conditions, as well as cancer, obesity, diabetes, inflammatory or autoimmune disease, cardiovascular disorder, metabolic syndrome X, hair loss, severe acute respiratory syndrome coronavirus, cocaine addiction, dental caries, bone loss and glaucoma.

Abstract: A manufacturing method for a flash device. A manufacturing method for a flash device, comprising: providing a substrate (110); forming sequentially, on the substrate (110), a floating gate (FG) oxide layer (120), an FG polycrystalline layer (130), and an FG mask layer (140); etching, at the FG location region, the FG polycrystalline layer (130) and the FG mask layer (140), forming a window (141) on the FG mask layer (140), and forming a trench (131) on the FG polycrystalline layer (130), the window (141) being communicated with the trench (131); performing second etching of the side wall of the window (141) of the FG mask layer (140), enabling the width of the trench (131) located on the FG polycrystalline layer (130) to be less than the width of the secondarily-etched window (141) located on the FG mask layer (140); and oxidizing the FG polycrystalline layer (130), enabling the oxide to fill the trench (131) to form a field oxide layer (150); and etching an FG having sharp angles (?1, ?2).