Abstract: A drilling type sidewall coring apparatus, comprising: a main body, a transmission device, a bit mounted on the transmission device, a rack accommodated in the main body, and a plurality of first hydraulic oil cylinders, the transmission device mounted on the rack in a rotatable manner, the first hydraulic oil cylinders mounted on the main body, pistons of the first hydraulic oil cylinders connected with the rack, the telescopic motion of the pistons of the first hydraulic oil cylinders driving the rack to perform radial motion in the main body so as to make the bit protrude or retract from the main body. The electric motor is mounted in the main body and connected with the right angel speed reducer by the soft shaft. The electric motor transmits power by the soft shaft and the right angle speed reducer to drive the bit to rotate, the transmission efficiency is higher.

Abstract: The present disclosure provides a dimming circuit for SCR dimmer (silicon-controlled rectifier) circuit. The dimming circuit includes a signal conversion circuit for converting an input signal to a sine-wave voltage signal and output the sine-wave voltage signal to a current sampling end of a power factor correction circuit. The dimming circuit also includes the power factor correction circuit to receive the sine-wave voltage signal for correcting power factor. A biasing current is generated according to the input signal and is positively correlated to the input signal, and a sine-wave current signal corresponding to the sine-wave voltage signal is a sum of the biasing current and a primary current of a transformer in the power factor correction circuit.

Abstract: The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90 to 98):(2 to 10), the average particle size of the barium titanate is 50 to 300 nm and the nano complex oxide dopant has the following formula (1): wA+xB+yC+zD. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as a material of dielectric layers.

Abstract: The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90˜98):(2˜10), the average particle size of the barium titanate is 50˜300 nm and the nano complex oxide dopant has the following formula (1): w A+x B+y C+z D. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as the material of dielectric layers.

Abstract: The present invention provides a nano complex oxide doped dielectric ceramic material used for a multilayer ceramic capacitor using a base metal as a material of internal electrodes. The doped dielectric ceramic material comprises barium titanate and a nano complex oxide dopant, wherein the molar ratio of the barium titanate to the nano complex oxide dopant is in the range of (90˜98):(2˜10), the average particle size of the barium titanate is 50˜300 nm and the nano complex oxide dopant has the following formula (1): w A+x B+y C+z D. The present invention also provides processes for preparing the nano complex oxide doped dielectric ceramic material and ultrafine-grained and temperature-stable multilayer ceramic capacitors using the nano complex oxide doped dielectric ceramic material as the material of dielectric layers.