Abstract: The invention discloses a bamboo chip integrated material. The bamboo chip integrated material is formed by a plurality of lengthened bamboo chips which are glued and overlaid; each lengthened bamboo chip is formed by a plurality of bamboo chip units which sequentially and continuously mesh and are butted; sharp teeth and grooves are formed in the two ends in the length direction of the bamboo chip units, wherein the sharp tooth of each bamboo chip unit and the groove of the corresponding bamboo sheet unit are matched to form a meshing butt-joint part, and the meshing butt-joint parts of the adjacent lengthened bamboo chips are arranged in a staggered mode; and each bamboo chip unit has a thickness of 4-12 mm and a width of 15-50 mm.

Abstract: The present disclosure relates to an imaging device, a pixel and a method thereof The imaging device comprises: a pixel array, which comprises multiple pixels arranged in rows and columns, wherein at least one pixel comprises multiple subpixels, and the multiple subpixels share one floating diffusion region; and a control circuit, which controls the pixel array; wherein the control circuit reads the multiple subpixels one by one under the rolling shutter state, and reads the multiple subpixels simultaneously under the global shutter state.

Abstract: The present invention relates to an imaging apparatus, which comprises: a pixel array, comprising a plurality of pixels arranged in rows and columns, wherein at least one of the pixels comprises: a first capacitor configured to store a reset signal, and a second capacitor configured to store a pixel signal; a plurality of column circuits, wherein at least one of the column circuits reads the reset signal from the first capacitor, reads the pixel signal from the second capacitor, and generates difference between the reset signal and the pixel signal, wherein the pixel is configured to store the pixel signal to the second capacitor after the reset signal is stored to the first capacitor.

Abstract: The present disclosure relates to an imaging device, a pixel and a method thereof. The imaging device comprises: a pixel array, which comprises multiple pixels arranged in rows and columns, wherein at least one pixel comprises multiple subpixels, and the multiple subpixels share one floating diffusion region; and a control circuit, which controls the pixel array; wherein the control circuit reads the multiple subpixels one by one under the rolling shutter state, and reads the multiple subpixels simultaneously under the global shutter state.

Abstract: A pixel cell has four maskless phase detection photodiodes sharing the same readout amplifier, microlens and filter color. The four photodiodes are configured to operate in two adjacent pairs wherein the two adjacent pairs of photodiodes are separated by a light guide and are positioned under the single microlens such that light incident in a first direction is collected in a first pair of photodiodes of the two adjacent pairs of photodiodes and light incident in a second direction is collected in a second pair of photodiodes of the two adjacent pairs of photodiodes. The microlens has a plano-convex shape which causes light to be incident in two directions on photodiodes positioned under each of two sides of the microlens.

Abstract: A pixel cell has four maskless phase detection photodiodes sharing the same readout amplifier, microlens and filter color. The four photodiodes are configured to operate in two adjacent pairs wherein the two adjacent pairs of photodiodes are separated by a light guide and are positioned under the single microlens such that light incident in a first direction is collected in a first pair of photodiodes of the two adjacent pairs of photodiodes and light incident in a second direction is collected in a second pair of photodiodes of the two adjacent pairs of photodiodes. The microlens has a plano-convex shape which causes light to be incident in two directions on photodiodes positioned under each of two sides of the microlens.

Abstract: A pixel cell has a photodiode, a readout circuit, a vertical transfer transistor and a reflective structure. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry. The reflective structure is positioned between the readout circuit and the photodiode to reflect incident light, that passes through the photodiode without being absorbed, back towards the photodiode for a second chance at being absorbed.

Abstract: A pixel cell has a photodiode, a readout circuit, a vertical transfer transistor and a reflective structure. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry. The reflective structure is positioned between the readout circuit and the photodiode to reflect incident light, that passes through the photodiode without being absorbed, back towards the photodiode for a second chance at being absorbed.

Abstract: A pixel cell has a photodiode, a transfer transistor, and a readout circuit block. The photodiode, transfer transistor, and reset transistor are disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit block is disposed within a second substrate of a second semiconductor chip and the readout circuit block comprises optionally selectable rolling shutter and global shutter readout modes through the use of computer programmable digital register settings. The global shutter readout mode provides in-pixel correlated double sampling.

Abstract: A pixel cell has a photodiode, a readout circuit, and a vertical transfer transistor. The photodiode is disposed within a first substrate of a first semiconductor chip for accumulating an image charge in response to light incident upon the photodiode. The readout circuit is disposed within a second substrate of a second semiconductor chip. The vertical transfer transistor is coupled between the photodiode and the readout circuitry to transfer the image charge from the photodiode to the readout circuitry.

Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.

Abstract: The present invention relates to an imaging apparatus, which comprises: a pixel array, comprising a plurality of pixels arranged in rows and columns, wherein at least one of the pixels comprises: a first capacitor configured to store a reset signal, and a second capacitor configured to store a pixel signal; a plurality of column circuits, wherein at least one of the column circuits reads the reset signal from the first capacitor, reads the pixel signal from the second capacitor, and generates difference between the reset signal and the pixel signal, wherein the pixel is configured to store the pixel signal to the second capacitor after the reset signal is stored to the first capacitor.

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract: An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode, a plurality of photodiodes, a shared floating diffusion region, a first transfer gate, and a second transfer gate. The first photodiode is disposed in a semiconductor material. The first photodiode has a first light exposure area and a first doping concentration. The plurality of photodiodes is also disposed in the semiconductor material. Each photodiode in the plurality of photodiodes has the first light exposure area and the first doping concentration. The first transfer gate is coupled to transfer first image charge from the first photodiode to the shared floating diffusion region. The second transfer gate is coupled to transfer distributed image charge from each photodiode in the plurality of photodiodes to the shared floating diffusion region.

Abstract: Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.