Abstract: The embodiments of the disclosure provide an immersion liquid cooling device and a liquid cooling system. The liquid cooling device includes a cabinet comprising a first cavity and a second cavity integrated on a side wall of the first cavity; and a heat exchange module adapted to be inserted into the second cavity via an opening on the second cavity, and comprising a heat exchanger, a coolant driving device and a guiding assembly, the heat exchanger being configured to cool the first coolant with the second coolant, the coolant driving device being configured to drive the first coolant to circulate between the second cavity and the first cavity, and the guiding assembly comprising a liquid flow channel configured to guide the first coolant from the coolant driving device to the heat exchanger.

Abstract: The embodiments of the disclosure provide an immersion liquid cooling device and a liquid cooling system. The liquid cooling device includes a cabinet comprising a first cavity and a second cavity integrated on a side wall of the first cavity; and a heat exchange module adapted to be inserted into the second cavity via an opening on the second cavity, and comprising a heat exchanger, a coolant driving device and a guiding assembly, the heat exchanger being configured to cool the first coolant with the second coolant, the coolant driving device being configured to drive the first coolant to circulate between the second cavity and the first cavity, and the guiding assembly comprising a liquid flow channel configured to guide the first coolant from the coolant driving device to the heat exchanger.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Abstract: Methods of making photovoltaic devices and photovoltaic devices including perovskite materials and having contact layers are described herein.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: The present disclosure relates to a method that includes preparing a mixture by dissolving at least two halide perovskite precursors in a first liquid, forming a halide perovskite crystal in the mixture by lowering a solubility limit of at least one of the halide perovskite precursors, and separating the halide perovskite crystal from the mixture, where at least one of the halide perovskite precursors contains an impurity, and the halide perovskite crystal is substantially free of the impurity.

Abstract: Methods and compositions for forming perovskite hole transport layers for use in manufacturing photovoltaic devices are described. Embodiments include using a plurality of hole transport materials to produce high-performance HTL contacts to improve performance and stability.

Abstract: Photovoltaic devices having contact layers are described herein. Devices, intermediate structures, and methods for making multilayer contacts for perovskite photovoltaic devices are provided. Embodiments include back contacts for N-I-P structures.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Abstract: Photovoltaic devices (100) with type ll-VI semiconductor absorber materials (160) having p-type contact layers (180) are obtained by forming a ll-VI absorber layer over a substrate stack (113), wherein the type II material includes cadmium (Cd) and the type VI material includes tellurium (Te); contacting an alkaline wash fluid, comprising a hydroxide, to a second surface of the absorber layer to produce a Cd-rich surface, depositing a p-type contact layer (180) over the absorber layer (160), whereby the p-type contact layer is directly adjacent to the Cd-rich layer, and wherein the p-type contact layer comprises at least one of: PTAA, P3HT, poly-TPD, TFB, TTF-1, TF8-TAA, TIF8-TAA, SGT-407, PCDTBT, SpiroOMeTAD, anthracene-based HTM, polythiophene, semiconducting polymers, NiO, CuSCN, or Cui; and depositing a conductive layer (190) over the p-type contact layer.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Abstract: Structures and methods for manufacturing photovoltaic devices by forming perovskite layers and perovskite precursor layers using vapor transport deposition (VTD) are described.

Abstract: A doped photovoltaic device is presented. The photovoltaic device includes a semiconductor absorber layer or stack disposed between a front contact and a back contact. The absorber layer comprises cadmium, selenium, and tellurium doped with Ag, and optionally with Cu. The Ag dopant may be added to the absorber in amounts ranging from 5×1015/cm3 to 2.5×1017/cm3 via any of several methods of application before, during, or after deposition of the absorber layer. The photovoltaic device has improved Fill Factor and PMAX at higher Pr(=Isc*Voc product) values, e.g. about 160 W, which results in improved conversion efficiency compared to a device not doped with Ag. Improved PT may result from increased Isc, increased Voc, or both.

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer. A photovoltaic device may include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSeTe layer over a substrate. The process includes forming a p-type cadmium selenide telluride absorber layer.

Abstract: Methods and devices are described for a photovoltaic device. The photovoltaic device includes a glass substrate, a semiconductor absorber layer formed over the glass substrate, a metal back contact layer formed over the semiconductor absorber layer, and a p-type back contact buffer layer formed from one of MnTe, Cd1-xMnxTe, and SnTe, the buffer layer disposed between the semiconductor absorber layer and the metal back contact layer.

Abstract: A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.