Abstract: The present disclosure provides a method and apparatus for detecting a region of interest in a video, a device and a storage medium. The method may include: acquiring a current to-be-processed frame from a picture frame sequence of a video; detecting a region of interest (ROI) in the current to-be-processed frame, in response to determining that the current to-be-processed frame is a detection picture frame, to determine at least one ROI in the current to-be-processed frame; and updating a to-be-tracked ROI, based on the ROI in the current to-be-processed frame and a tracking result determined by a pre-order tracking picture frame; and tracking the current to-be-processed frame based on the existing to-be-tracked ROI, in response to determining that the current to-be-processed frame is a tracking picture frame, to determine at least one tracking result as the ROI of the current to-be-processed frame.

Abstract: Embodiments of the present disclosure provide a method and apparatus for processing an image, and relates to the field of computer vision technology. The method may include: acquiring a value to be processed, where the value to be processed is associated with an image to be processed; and processing the value to be processed by using a quality scoring model to generate a score of the image to be processed in a target scoring domain, where the score of the image to be processed in the target scoring domain is related to an image quality of the image to be processed.

Abstract: The present invention provides an IPS TFT array substrate and a manufacturing method thereof. The manufacturing method of an IPS TFT array substrate of the present invention includes: forming a gate electrode, a scan line, a pixel electrode, and a common electrode with a first mask-involved operation, forming a first through hole and a second through hole in the gate insulation layer and an active layer with a second mask-involved operation, and forming a source electrode, a drain electrode, a data line, and a common electrode line with a third mask-involved operation. The present invention uses only three mask-involved operations to complete the manufacturing of an IPS TFT array substrate. Compared to the state of the art, the number of masks used is reduced, the manufacturing time is shortened, and thus the manufacturing cost is lowered. The IPS TFT array substrate of the present invention has a simple manufacturing process, a low manufacturing cost, and excellent electrical properties.

Abstract: A manufacturing method of TFT substrate and a TFT substrate are provided. The method provides a dual-gate structure symmetrically disposed on both sides of active layer, which prevents TFT threshold voltage from changing and improve TFT conduction state switching; by first manufacturing the active layer before the gate insulating layer to make the insulating layer directly grow on active layer, the contact interface between the gate insulating layer and active layer is improved, leading to further improving TFT conduction state switching. The TFT substrate makes the gate located between the source and the pixel electrode in vertical direction, and the dual-gate is symmetrically disposed on both sides of active layer to prevent TFT threshold voltage from changing and improve TFT conduction state switching, as well as improve the contact interface between the gate insulating layer and active layer, leading to further improving TFT conduction state switching.

Abstract: The present application discloses a video-based human behavior recognition method, apparatus, device and storage medium, and relates to the technical field of human recognitions. The specific implementation scheme lies in: acquiring a human rectangle of each video frame of the video to be recognized, where each human rectangle includes a plurality of human key points, and each of the human key points has a key point feature; constructing a feature matrix according to the human rectangle of the each video frame; convolving the feature matrix with respect to a video frame quantity dimension to obtain a first convolution result and convolving the feature matrix with respect to a key point quantity dimension to obtain a second convolution result; inputting the first convolution result and the second convolution result into a preset classification model to obtain a human behavior category of the video to be recognized.

Abstract: The present invention belongs to the technical field of mobile transformer substation, and in particular relates to a vehicle-mounted mobile transformer with a position-adjustable lead-out bushing.

Abstract: The present invention teaches a TFT array substrate and its manufacturing method including the following steps. A data line and a ring-shaped source electrode are formed on a substrate. A first insulation layer is formed on the substrate. A ring trough exposing the source electrode is formed on the first insulation layer. A semiconductor active layer is formed in the ring trough. A channel is formed on the first insulation layer in an area surrounded by the ring trough. A gate line, a gate electrode in the channel, and a drain electrode connected to the semiconductor active layer are formed on the first insulation layer. A second insulation layer is formed on the first insulation layer, and a pixel via is formed on the second insulation layer. A pixel electrode is formed on the second insulation layer, and is connected to the drain electrode through the pixel via.

Abstract: The present invention teaches a pixel unit including thin film transistors (TFTs) and pixel electrodes corresponding to the TFTs. The pixel electrodes are connected to the source electrodes of the TFTs. Each pixel electrode includes multiple arc-shaped electrode units arranged at intervals along an axial direction around a periphery of a corresponding TFT. The electrode units are electrically connected together. The present invention adopts arc-shaped pixels (similar to concentric circles) so that liquid crystal molecules are closer to being isotropic. Then, by having different vertical alignment (VA) TFT designs in the primary pixel region and secondary pixel region and utilizing the differences in W/L and capacitance, different voltage levels for primary pixel electrode and secondary pixel electrode are achieved. The color shift problem is improved and the viewing angle is enhanced.

Abstract: The present invention teaches a TFT array substrate and its manufacturing method including the following steps. A data line and a ring-shaped source electrode are formed on a substrate. A first insulation layer is formed on the substrate. A ring trough exposing the source electrode is formed on the first insulation layer. A semiconductor active layer is formed in the ring trough. A channel is formed on the first insulation layer in an area surrounded by the ring trough. A gate line, a gate electrode in the channel, and a drain electrode connected to the semiconductor active layer are formed on the first insulation layer. A second insulation layer is formed on the first insulation layer, and a pixel via is formed on the second insulation layer. A pixel electrode is formed on the second insulation layer, and is connected to the drain electrode through the pixel via.

Abstract: The disclosed embodiments relate to a content-recommendation method and apparatus, an electronic device, and a system. The method comprises: searching, by a recommendation system according to a determined tag, a content database for content matching the tag; and recommending, by the recommendation system, the matching content to a user corresponding to the tag. Content in the content database is determined according to first-type content acquired by an internal-operation system by means of matching and second-type content acquired by an external-operation system by means of matching.

Abstract: a method and an apparatus for classifying a video are provided. The method may include: acquiring a to-be-classified video; extracting a set of multimodal features of the to-be-classified video; inputting the set of multimodal features into a post-fusion model corresponding to each modal respectively, to obtain multimodal category information of the to-be-classified video; and fusing the multimodal category information of the to-be-classified video, to obtain category information of the to-be-classified video. This embodiment improves the accuracy of video classification.

Abstract: A method, device, apparatus for predicting a video coding complexity and a computer-readable storage medium are provided. The method includes: acquiring an attribute feature of a target video; extracting a plurality of first target image frames from the target video; performing a frame difference calculation on the plurality of the first target image frames, to acquire a plurality of first frame difference images; determining a histogram feature for frame difference images of the target video according to a statistical histogram of each first frame difference image; and inputting a plurality of features of the target video into a coding complexity prediction model to acquire a coding complexity prediction value of the target video. Through the above method, the BPP prediction value can be acquired intelligently.

Abstract: The present invention provides a VA type TFT array substrate and a manufacturing thereof. The manufacturing method for a VA type TFT array substrate of the present invention comprises that three pixel electrodes are formed in one pixel. The three pixel electrodes are connected to the same TFT but located on different structure layers. Therefore, the driving capabilities to liquid crystals are different. In the present invention, the three pixel electrodes are used to adjust the liquid crystal transmittances of three regions in one pixel, which is beneficial of keeping the brightness uniformity of the pixel when seeing from different angels, thereby enhancing the viewing angle of the VA type LCDs. The VA type TFT array substrate of the present invention disposes three pixel electrodes are formed in one pixel, which is beneficial of enhancing the viewing angle of the VA type LCDs.

Abstract: The present invention provides a VA type TFT array substrate and a manufacturing thereof. The manufacturing method for a VA type TFT array substrate of the present invention comprises that three pixel electrodes are formed in one pixel. The three pixel electrodes are connected to the same TFT but located on different structure layers. Therefore, the driving capabilities to liquid crystals are different. In the present invention, the three pixel electrodes are used to adjust the liquid crystal transmittances of three regions in one pixel, which is beneficial of keeping the brightness uniformity of the pixel when seeing from different angels, thereby enhancing the viewing angle of the VA type LCDs. The VA type TFT array substrate of the present invention disposes three pixel electrodes are formed in one pixel, which is beneficial of enhancing the viewing angle of the VA type LCDs.

Abstract: The present disclosure relates to an array substrate, a manufacturing method thereof, and a display panel. Each of the pixel areas correspondingly connects with a data line and a scanning line. In each of the pixel areas, a source of a first TFT and a gate of a second TFT are on the same layer. A gate of the first TFT, a source and a drain of the second TFT, and the scanning line are on the same layer. As such, the present disclosure may avoid the color shift of the vertical alignment (VA) display and may improve the pixel aperture rate.

Abstract: The disclosure provides a manufacturing method for a thin film transistor, wherein a manufacturing method for a data line and a source/drain specifically includes: S21: respectively manufacturing a data line material film layer and a source/drain material film layer; S22: manufacturing a photoresist material film layer; S23: performing a half-tone method to etch the photoresist material film layer, forming a photoresist layer, and obtaining a first etching substrate; S24: performing a 4-mask process to etch the first substrate, forming the data line on a gate insulating layer, forming the source and the drain on an active layer, and forming a the back channel between the source and the drain to obtain the thin film transistor. The disclosure further provides a manufacturing method for an array substrate, wherein the manufacturing method for an array substrate includes the above-mentioned manufacturing method for a thin film transistor.

Abstract: The present application discloses an array substrate and a method of manufacturing the same. The array substrate includes a first insulating layer disposed on the substrate; a source electrode pattern disposed within the first insulating layer; an annular gate electrode pattern disposed on the first insulating layer and surrounded the periphery of the source electrode pattern; a second insulating layer covering on the annular gate electrode pattern; a semiconductor pattern disposed in the annular area of the annular gate electrode pattern, and is electrically connected to the exposed portion of the source electrode pattern, the semiconductor pattern is further electrical insulation to the annular gate electrode pattern through the second insulating layer; a pixel electrode disposed on the second insulating layer and electrically connected to a side of the semiconductor pattern remote from the substrate.

Abstract: A method for manufacturing a TFT (Thin-Film Transistor) substrate is proposed. The method includes utilizing a first photomask process to form a buffer layer, a data line, a source electrode, a first scan line, a second scan line, and a gate electrode on a substrate; utilizing a second photomask process to form a first insulation layer, a second insulation layer, a first semiconductor layer, and a second semiconductor layer on the substrate; and utilizing a third photomask process to form a first conductor layer, an electrical connection portion, and a drain electrode on the substrate.

Abstract: A method for manufacturing an array substrate includes forming a buffer layer on a substrate; forming a source and a data line in the buffer layer, forming a first gate, a second gate, a first scan line, and a second scan line on the buffer layer, simultaneously; forming a semiconductor layer; forming a conductor layer by converting the semiconductor layer formed on the first scan line and the second scan line into a conductor; forming a first pixel electrode on the semiconductor layer and forming a second pixel electrode on the conductor layer, simultaneously.

Abstract: A thin film transistor is provided, including a base substrate, a semiconductor active layer, a gate electrode, a gate insulating layer, a source electrode and a drain electrode. The gate insulating layer is formed on the base substrate, the gate insulating layer is provided with a through hole and an annular groove surrounding the through hole. The gate electrode is formed in the through hole, the semiconductor active layer is formed in the annular groove, a height of the gate electrode in the through hole is at least higher than a bottom of the annular groove. The source electrode and the drain electrode are formed on the gate insulating layer at intervals and connected to the semiconductor active layer, respectively. A method of manufacturing the thin film transistor and an array substrate including the thin film transistor are also provided.