Patents by Inventor Zhichuan NIU

Zhichuan NIU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11489315
    Abstract: An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.
    Type: Grant
    Filed: October 31, 2019
    Date of Patent: November 1, 2022
    Assignee: INSTITUTE OF SEMICONDUCTORS, CHINESE ACADEMY OF SCIENCES
    Inventors: Chengao Yang, Zhichuan Niu, Yu Zhang, Yingqiang Xu, Shengwen Xie, Yi Zhang, Jinming Shang
  • Publication number: 20210296849
    Abstract: An on-chip integrated semiconductor laser structure and a method for preparing the same. The structure includes: an epitaxial structure including a first N contact layer, a first N confinement layer, a first active region, a first P confinement layer, a first P contact layer, an isolation layer, a second N contact layer, a second N confinement layer, a second active region, a second P confinement layer, and a second P contact layer sequentially deposited on a substrate; a first waveguide and a second waveguide; a first optical grating and a second optical grating; and current injection windows.
    Type: Application
    Filed: October 31, 2019
    Publication date: September 23, 2021
    Inventors: Chengao Yang, Zhichuan NIU, Yu ZHANG, Yingqiang XU, Shengwen XIE, YI ZHANG, Jinming SHANG