Abstract: This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

Abstract: A liquid-cooling packaging structure, a liquid-cooling heat dissipation system and a communication device are disclosed. The liquid-cooling package structure may include: a sealed cavity, where the sealed cavity includes at least one integrated chip and is provided with a liquid inlet port and a liquid outlet port, and an inner side of the integrated chip is provided with heat dissipation fins; and a turbulence block, where the turbulence block is provided within the sealed cavity, a liquid-cooling flow channel directed toward the liquid outlet port is formed between the integrated chip and the turbulence block.

Abstract: The invention relates to a substrate processing method for processing a substrate by a processing fluid in a supercritical state in a processing chamber. The method comprising introducing the processing fluid in the form of a gas pressurized to a first pressure lower than a critical pressure of the processing fluid into an internal space of the processing chamber in which the substrate is accommodated, thereby boosting a pressure in the internal space to the first pressure; and filling the internal space with the processing fluid in the supercritical state by introducing the processing fluid having a second pressure higher than the critical pressure into the internal space having the pressure boosted to the first pressure.

Abstract: A substrate processing apparatus according to the invention includes a processing chamber which has an internal space capable of storing the substrate, a supplier which supplies the processing fluid in the form of a liquid, a heater which heats the liquid processing fluid supplied from the fluid supplier to or above a critical temperature of the processing fluid and causing a transition into a supercritical state, a flow passage forming part which forms a flow passage of the processing fluid from the supplier to the processing chamber by way of the heater, a first filter which is disposed in the flow passage between the supplier and the heater and filters the liquid processing fluid and a second filter which is disposed in the flow passage between the heater and the processing chamber and filters the processing fluid in the supercritical state.

Abstract: A substrate processing apparatus according to the invention includes a first supplier for supplying a gaseous processing fluid pressurized to a first pressure lower than a critical pressure to a processing chamber, a second supplier for supplying the processing fluid having a second pressure higher than the critical pressure, an introduction flow passage for introducing the processing fluid into an internal space of the processing chamber, a first pipe connecting the first supplier and the introduction flow passage via a first valve, a second pipe connecting the second supplier and the introduction flow passage via a second valve, and a controller for controlling the first valve and the second valve. The second supplier includes a storage storing a liquid processing fluid, and a pressurizer for pressurizing the processing fluid to the second pressure in the second pipe from the storage to the second valve and feeding the processing fluid.

Abstract: A substrate processing apparatus includes a processing chamber having an internal space for storing the substrate, a supplier for supplying the processing fluid to the processing chamber, a discharger for discharging the processing fluid from the processing chamber, a controller for changing a pressure of the internal space based on a processing recipe by controlling the supplier and the discharger, a filter provided in an introduction flow passage from the supplier to the processing chamber for filtering the processing fluid, a first detector provided between the supplier and the filter in the introduction flow passage for detecting a flow rate of the processing fluid flowing in the introduction flow passage, and a second detector provided in a discharge flow passage from the processing chamber to the discharger for detecting a flow rate of the processing fluid flowing in the discharge flow passage.

Abstract: A substrate processing method of the invention includes accommodating a substrate having an upper surface covered with a liquid film and being placed on a support member having a flat plate-like shape in a horizontal position, into an internal space of a processing chamber, filling the internal space with the processing fluid in a supercritical state, and discharging the processing fluid from the internal space. A first ejection port ejects the processing fluid in a horizontal direction toward a space between a bottom surface among wall surfaces of the processing chamber and a lower surface of the support member. Additionally, after an internal pressure of the internal space exceeds a critical pressure of the processing fluid, a second ejection port ejects the processing fluid in a horizontal direction toward a space between a ceiling surface among the wall surfaces and an upper surface of the substrate.

Abstract: Disclosed are a heat sink fixing structure and a board-level heat dissipation apparatus. The heat sink fixing structure comprises a support structure and a floating structure; the support structure comprises a first support member for providing support for the semiconductor component and a second support member spaced apart from the first support member; the heat sink is arranged corresponding to the semiconductor component and is connected to the second support member in a floating configuration, making it adaptable to semiconductor components of different heights and tolerances, effectively reducing the temperature of semiconductor components and improving long-term reliability. By using the first and second support members to respectively support the heat sink and semiconductor components, the number of openings near the semiconductor component on the integrated circuit board is reduced, thereby reducing the wiring difficulty of the integrated circuit board and reducing the stress it bears.

Abstract: Provided are a preparation method for and use of a self-assembly-based nitrogen-doped ordered porous precious metal nanomaterial. The preparation method includes: with a pyridine nitrogen-containing amphiphilic block copolymer as a structure-directing agent and a phenolic resin as a template agent, adding a precious metal precursor, inducing self-assembly by means of volatilization of a solvent, and carbonizing in an inert atmosphere to prepare the nitrogen-doped ordered porous precious metal nanomaterial. The regularity, dispersity and uniformity of the precious metal nanomaterial are achieved; the problems of migration and inactivation after agglomeration of precious metal nanoparticles are solved; the lifespan of precious metal particles is prolonged; and in addition, the ORR electro-catalytic property of the material can be improved, and the nitrogen-doped ordered porous precious metal nanomaterial can be used to prepare a cathodic oxygen reduction catalyst for a fuel cell.

Abstract: A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.

Abstract: This invention relates to a substrate processing technique for performing a pressure increasing step, a pressure keeping step and a pressure reducing step in this order in a processing container. A flow rate of a processing fluid in a processing space is suppressed to a second flow rate lower than a first flow rate while maintaining the processing space at a first pressure between the pressure increasing step and the pressure keeping step or in an initial stage of the pressure keeping step. In this way, the mutual diffusion between the processing fluid and a liquid in the processing space is promoted. After this diffusion proceeds, the substrate is dried by the discharge of the processing fluid from the processing space.

Abstract: A technology for securing favorable appearance of a SiC member, the SiC member includes: a first SiC layer having a first upper surface having a concavo-convex shape and a first lower surface; and a second SiC layer having a second upper surface and a second lower surface, the second lower surface being in contact with the first upper surface and having a concavo-convex shape corresponding to that of the first upper surface. The second SiC layer has a recess concaved from the second upper surface toward the second lower surface side and a flat bottom surface, and the bottom surface of the recess is placed upward of the second lower surface.