Abstract: A field emission electron source includes a substrate, a first conductive electrode terminated to provide electrons, an emitting composite layer for emitting electrons, and a second electrode insulated from the emitter layer and terminated to extract electrons through vacuum space. The emitting composite layer lies between and parallel to the said first and the second electrodes, and comprises nano-structures embedded in a solid matrix. One end of the nano-structures is truncated and exposed at the surface of the emitter layer so that both the length and the apex of the nano-structure are regulated and the exposed nano-tips are kept substantially the same distance from the gate electrode. The embedding material is chosen to form triple junctions with the exposed tip to further enhance the field.

Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.

Abstract: A protective layer for an electronic device and devices with a protective layer. In one exemplary embodiment, the protective layer includes two different layers which can be etched by the same etchant as which are at least one of optically or RF transparent.

Abstract: A method of fabricating an electron source having a self-aligned gate aperture is disclosed. A substrate is deposited on a first conductive layer. Over the first conductive layer an emitter layer is deposited. The emitter layer includes one or a plurality of spaced-apart nano-structures and a solid surface with nano-structures protruding above the surface. An insulator is conformally deposited over the emitter layer surface and forms a post from each protruding nano-structure. A second conductive layer is deposited over the insulator and the second conductive layer and the insulator are removed from the nano-structures such that apertures are formed in the second conductive layer and at least the ends of the nano-structures are exposed at the centers of said apertures.