Abstract: The present disclosure provides a one pot process for co-electrodeposition of Zn—Ni layers on steel substrates involving pretreating a steel substrate and then immersing the steel substrate into an aqueous electrolyte containing at least salts of Ni and Zn with the salts of Ni and Zn being present in concentrations to give a ratio of Ni to Zn in a range from about 1:1 to about 1000:1, the aqueous electrolyte including a buffer to give the aqueous electrolyte a pH in a range from about 3 to about 6. This is followed by electroplating a Zn—Ni layer onto the steel substrate by applying a voltage between the steel substrate as cathode and an anode electrode also immersed in the aqueous electrolyte, the applied voltage being selected to give a current density in a range from about 8 mA/mm2 to about 50 mA/mm2. The electroplating is performed with the aqueous electrolyte heated to a temperature in a range from about 20° C. to about 50° C.

Abstract: A one-pot approach for preparing ArSH capped Cu2ZnSnS4, Cu2ZnSn(S(1-x)Sex)4, Cu2SnS3, CuInS2, and CuIn(S(1-x)Sex)2 nanocrystals is provided. Examples involving reacting copper (II) acetylacetonate and indium chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed CuInS2, nanocrystals having a size of about 100 nm were prepared. Examples involving reacting copper (II) acetylacetonate, zinc chloride, and tin chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed Cu2ZnSnS4 nanocrystals having a size of about 2 nm were prepared. Nanociystals obtained were found to have excellent crystallinity, stoichiometry, and high collective photovoltaic activity without the need for postprocessing such as high temperature annihilation in a sulfur atmosphere.

Abstract: The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuInxGa1-xSe2) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.

Abstract: A one-pot approach for preparing ArSH capped Cu2ZnSnS4, Cu2ZnSn(S(1-x)Sex)4, Cu2SnS3, CuInS2, and CuIn(S(1-x)Sex)2 nanocrystals is provided. Examples involving reacting copper (II) acetylacetonate and indium chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed CuInS2, nanocrystals having a size of about 100 nm were prepared. Examples involving reacting copper (II) acetylacetonate, zinc chloride, and tin chloride with thiourea and 2-mercapto-5-n-propylpyrimidine in the presence of an organic solvent are described. Monodispersed Cu2ZnSnS4 nanocrystals having a size of about 2 nm were prepared. Nanocrystals obtained were found to have excellent crystallinity, stoichiometry, and high collective photovoltaic activity without the need for postprocessing such as high temperature annihilation in a sulfur atmosphere.

Abstract: The present invention provides a hybrid solar energy conversion system in which a working fluid is made to flow between an internal photovoltaic array and a transparent top layer, where the working fluid is disinfected by a photocatalytic disinfectant layer provided on a light transmitting surface contacting the working fluid. The working fluid is further contacted with the photovoltaic array for the absorption of heat, and the absorbed heat is extracted via an external heat extraction device such as a water tank or a heat exchanger. Accordingly, the present invention provides an improved solar energy conversion system providing both electrical and thermal power, and further utilizing a portion of the solar spectrum for the photocatalytic disinfection of the working fluid.

Abstract: The present invention describes a method of producing a photovoltaic solar cell with stoichiometric p-type copper indium gallium diselenide (CuInxGa1-xSe2) (abbreviated CIGS) as its absorber layer and II-IV semiconductor layers as the n-type layers with electrodeposition of all these layers. The method comprises a sequence of novel procedures and electrodeposition conditions with an ionic liquid approach to overcome the technical challenges in the field for low-cost and large-area production of CIGS solar cells with the following innovative advantages over the prior art: (a) low-cost and large-area electrodeposition of CIGS in one pot with no requirement of post-deposition thermal sintering or selenization; (b) low-cost and large-area electrodeposition of n-type II-VI semiconductors for the completion of the CIGS solar cell production; and (c) low-cost and large-area deposition of a buffer layer of CdS or other compounds with a simple chemical bath method.