Abstract: A method for manufacturing a nanosheet semiconductor device includes: forming a liner layer to cover first and second fin structures, each of the fin structures including a stacked structure, a poly gate disposed on the stacked structure, and inner spacers, the stacked structure including sacrificial features covered by the inner spacers, and channel features disposed to alternate with the sacrificial features; forming a dielectric layer to cover the liner layer, the dielectric layer including an upper portion, a lower portion, and an interconnecting portion that interconnects the upper and lower portions and that laterally covers the liner layer; subjecting the upper and lower portions to a directional treatment; and removing the upper and interconnecting portions of the dielectric layer and a portion of the liner layer, to form a liner and a bottom dielectric insulator disposed on the liner.

Abstract: A cable assembly includes a cover, a first connector, a cable, and a second connector. The first connector includes a housing, a plurality of terminals received in the housing, and a metal shell. The cable includes a first end electrically connected to the first connector and a second end. The second connector is electrically connected to the second end of the cable. The first connector is attached on the cover and includes a mating surface parallel to the cover. The first end of the cable is arranged on one side of the first connector and the second connector includes a mating surface perpendicular to the cover.

Abstract: A cable assembly includes a cover, a first connector, a cable, and a second connector. The first connector includes a housing, a plurality of terminals received in the housing, and a metal shell. The cable includes a first end electrically connected to the first connector and a second end. The second connector is electrically connected to the second end of the cable. The first connector is attached on the cover and includes a mating surface parallel to the cover. The first end of the cable is arranged on one side of the first connector and the second connector includes a mating surface perpendicular to the cover.

Abstract: A method for surface treating plastic products is provided. The method includes the steps of providing a plastic substrate, the plastic substrate being made of electroplatable material; forming at least one electroconductive coating on the plastic substrate surface by electro-less plating; forming a copper layer on the electroconductive coating by electroplating; partially etching the surface of the copper layer using a laser to form a rough area; and forming a top coating on the copper layer by electroplating. Both shiny appearance and dusky appearance of the plastic substrate can be present by this method.