Abstract: A tin-based perovskite thin film employing stress control, a preparation method therefor, and a photoelectric device are provided. The preparation method includes placing a tin-based perovskite solution film and a ligand solution in the same chamber, making a degree of vacuum of the chamber lower than 1,000 Pa by performing air pumping, and then stopping air pumping, wherein the ligand solution is a solution containing an amino or mercapto functional group; maintaining the chamber to be in a closed state, so that tin-based perovskite is complexed with a solvent to form a mesophase solid film with an ability to resist thermal stress impact, the ligand solution continues to be volatilized to fill the chamber to form a ligand atmosphere, and the ligand is combined with the uncoordinated tin ion in the mesophase solid film to reduce surface defects; and taking out the mesophase solid film and annealing.

Abstract: The invention relates to a compound or a salt thereof, a method for preparation thereof, and use thereof, wherein the compound has the structure of Formula (1): the substituents in Formula (1) are as defined in the specification. The compound of Formula (1) or a salt thereof can be attached to a solid-phase resin, on which solid-phase synthesis may be performed.

Abstract: Examples described herein relate to offload reliable transport management to a network interface device and store packets to be resent, based on received packet receipt acknowledgements (ACKs), into one or more kernel space queues that are also accessible in user space.

Abstract: Systems and methods are provided for automatically determining an intent of a user based on an intent model to attach a file to a document, prompting the user to confirm the intent using a predetermined character in an inline nudge, generating and displaying an inline menu with an interactive list of ranked files as a suggestion for attachment. The disclosed technology uses the intent for specifying a scope of the inline search. The intent model for attaching content maintained by third-party applications uses a combination of an embeddings model and an N-gram model with limited seed queries and determines the intent based on intent scores associated with respective third-party applications. The present disclosure ranks respective candidate content based on a degree of relevance to the intent. The user selects one or more content from the list for attaching to the document.

Abstract: The disclosure discloses a temperature compensation circuit and method for a neural network computing-in-memory array. Reference arrays sparsely inserted in the computing-in-memory array are adopted to provide a reference voltage for ADCs, so that an input voltage and a reference voltage of the ADCs have a same temperature coefficient. Finally, after analog-to-digital conversion by the ADC, the digital output of the ADC is not affected by the external temperature, thereby ensuring the operational precision of the neural network. According to the temperature compensation circuit of the disclosure, the reference arrays have the same structure as the computing-in-memory array. The insertion density of the reference arrays is related to the temperature field where the computing-in-memory arrays are located.

Abstract: The disclosure discloses a temperature compensation circuit and method for a neural network computing-in-memory array. Reference arrays sparsely inserted in the computing-in-memory array are adopted to provide a reference voltage for ADCs, so that an input voltage and a reference voltage of the ADCs have a same temperature coefficient. Finally, after analog-to-digital conversion by the ADC, the digital output of the ADC is not affected by the external temperature, thereby ensuring the operational precision of the neural network. According to the temperature compensation circuit of the disclosure, the reference arrays have the same structure as the computing-in-memory array. The insertion density of the reference arrays is related to the temperature field where the computing-in-memory arrays are located.

Abstract: Embodiments provide search answer extensibility by using either one or more primary applications that is executing or residing on, or is accessible to, a first computing device that receives a natural language (NL) query and/or one or more assigned applications that is executing or residing on the first computing device or on a different second computing device to process the NL query and provide a response to the NL query.

Abstract: Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

Abstract: A method and a system for detecting a pantograph-catenary electric arc based on a train power supply system are provided. The method includes: boosting, by a booster transformer, a voltage of alternating current transmitted via an electric network, to generate high voltage electrical energy, where a high voltage and a great current are generated in a gap between a catenary wire and a pantograph in a discharging circuit with the high voltage electrical energy; and collecting an electric arc generated in the gap between the catenary wire and the pantograph in a case of the high voltage and the great current.

Abstract: A method and a system for detecting a pantograph-catenary electric arc based on a train power supply system are provided. The method includes: boosting, by a booster transformer, a voltage of alternating current transmitted via an electric network, to generate high voltage electrical energy, where a high voltage and a great current are generated in a gap between a catenary wire and a pantograph in a discharging circuit with the high voltage electrical energy; and collecting an electric arc generated in the gap between the catenary wire and the pantograph in a case of the high voltage and the great current.

Abstract: The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Abstract: A compound having the general structure R1, R2, R3 and R4 being selected from the group consisting of a hydrogen atom (H) and a C1-C20 alkyl, and R5 being a phenyl radical.

Abstract: The present invention provides a method for removing burrs of battery electrode plates using inductively coupled plasma (ICP) dry etching, in which an induction coil is used for ionizing reaction gas. A DC bias is applied to accelerate the ionized reaction gas to bombard the burrs of electrode plate, removing burrs that formed in machining processes using physical bombardment. The equipment used in the present invention is an ICP etch system. The method according to the present invention can completely remove the burrs of electrode plate, thereby effectively preventing short circuits caused by burrs penetrating the membrane separator in the battery.

Abstract: A compound having the general structure R1, R2, R3 and R4 being selected from the group consisting of a hydrogen atom (H) and a C1-C20 alkyl, and R5 being a phenyl radical.