Patents by Inventor Zhihan Chen

Zhihan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11837792
    Abstract: Embodiment high-frequency radiator includes two plus and minus 45-degree single-polarized radiators. The single-polarized radiator includes a radiation arm, a balun, a feeder circuit, a filter, and a ground plane. The radiation arm and the balun are electrically connected. The feeder circuit and the balun are separately disposed on two surfaces of a first dielectric plate that is placed vertically. The ground plane is disposed on a downward surface of a second dielectric plate that is placed horizontally. The first dielectric plate is vertically disposed on the second dielectric plate, and the filter includes a capacitor branch and an inductor branch. The inductor branch is disposed on a same surface of the first dielectric plate as the balun, the inductor branch is separately electrically connected to the balun and the ground plane, and the capacitor branch is coupled to the ground plane.
    Type: Grant
    Filed: June 28, 2021
    Date of Patent: December 5, 2023
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Xiuyin Zhang, Zhiqiang Liao, Chengdai Xue, Yaojiang Zhang, Yili Xu, Zhihan Chen
  • Publication number: 20210328365
    Abstract: Embodiment high-frequency radiator includes two plus and minus 45-degree single-polarized radiators. The single-polarized radiator includes a radiation arm, a balun, a feeder circuit, a filter, and a ground plane. The radiation arm and the balun are electrically connected. The feeder circuit and the balun are separately disposed on two surfaces of a first dielectric plate that is placed vertically. The ground plane is disposed on a downward surface of a second dielectric plate that is placed horizontally. The first dielectric plate is vertically disposed on the second dielectric plate, and the filter includes a capacitor branch and an inductor branch. The inductor branch is disposed on a same surface of the first dielectric plate as the balun, the inductor branch is separately electrically connected to the balun and the ground plane, and the capacitor branch is coupled to the ground plane.
    Type: Application
    Filed: June 28, 2021
    Publication date: October 21, 2021
    Inventors: Xiuyin Zhang, Zhiqiang Liao, Chengdai Xue, Yaojiang Zhang, Yili Xu, Zhihan Chen
  • Patent number: 9718736
    Abstract: Disclosed is a sintering process for ceramic sheets. After biscuit firing and glazing, a green body is placed in a kiln, wherein the temperature of the kiln is controlled such that: when the kiln temperature is 100-400° C., the temperature rise duration is 1-2 hours when the kiln temperature is 400-900° C., the temperature rise duration is 2-3 hours; when the kiln temperature is 900-1100° C., the temperature rise duration must reach 3 hours or more; when the kiln temperature is 1100-1350° C. the temperature rise duration is controlled to be 3-4 hours; and after the temperature reaches 1350° C., heat-preservation cooling is conducted; when the temperature drops to 1230-1270° C., the temperature is raised again to 1290-1310° C.; when the temperature drops again to 880-920° C., the kiln cover is opened for cooling, and the finished product is taken out.
    Type: Grant
    Filed: September 15, 2014
    Date of Patent: August 1, 2017
    Assignee: FUJIAN JIAMEI GROUP CORPORATION
    Inventor: Zhihan Chen
  • Publication number: 20160207839
    Abstract: Disclosed is a sintering process for ceramic sheets. After biscuit firing and glazing, a green body is placed in a kiln, wherein the temperature of the kiln is controlled such that: when the kiln temperature is 100-400° C., the temperature rise duration is 1-2 hours when the kiln temperature is 400-900° C., the temperature rise duration is 2-3 hours; when the kiln temperature is 900-1100° C., the temperature rise duration must reach 3 hours or more; when the kiln temperature is 1100-1350° C. the temperature rise duration is controlled to be 3-4 hours; and after the temperature reaches 1350° C., heat-preservation cooling is conducted; when the temperature drops to 1230-1270° C., the temperature is raised again to 1290-1310° C.; when the temperature drops again to 880-920° C., the kiln cover is opened for cooling, and the finished product is taken out.
    Type: Application
    Filed: September 15, 2014
    Publication date: July 21, 2016
    Applicant: FUJIAN JIAMEI GROUP CORPORATION
    Inventor: Zhihan CHEN
  • Publication number: 20080133184
    Abstract: A method to precisely differentiate the heavily overlapped electrical properties (electrical impedance or complex dielectric permittivity) measured from a system (a biological tissue, a body, a material, or a device, etc.).
    Type: Application
    Filed: November 20, 2007
    Publication date: June 5, 2008
    Inventor: Zhihan Chen