Abstract: The present invention provides a stent and a drug-loaded stent. The stent includes at least one stent mesh, wherein each stent mesh comprises a plurality of stent struts sequentially connected circumferentially around the stent mesh, wherein the plurality of the stent struts are sequentially connected end to end, and a joint is formed at the connected ends of adjacent stent struts. The stent mesh is configured to expand or collapse as a result of widening or narrowing of angles at the joints. Each stent strut includes at least one main section and at least one broadened section. The main section has a width smaller than that of the broadened section. In each stent mesh, the broadened sections of adjacent stent struts are staggered along an axis of the stent mesh. The drug-loaded stent is of a similar structure.

Abstract: A stent and a drug-loaded stent, each including at least one stent mesh, each stent mesh includes a plurality of stent struts, which are connected end to end circumferentially around the stent mesh, and a joint is formed at the connected ends of adjacent stent struts. The stent mesh is configured to expand or collapse as a result of widening or narrowing of angles at the joints. Each stent strut includes at least one main section and at least one broadened section. The main section has a width smaller than that of the broadened section. In each stent mesh, the broadened sections of adjacent stent struts are staggered along an axis of the stent mesh. This arrangement enables reasonable space utilization and achieves a good tradeoff between metal coverage and radial strength of the stent.

Abstract: A stent and a drug-loaded stent. The stent includes at least one stent mesh each including a plurality of stent struts, which are connected end to end circumferentially around the stent mesh, a joint is formed at the connected ends of adjacent stent struts. The stent mesh is configured to expand or collapse as a result of widening or narrowing of angles at the joints. Each stent strut includes at least one main section and at least one broadened section. The main section has a width smaller than that of the broadened section. In each stent mesh, the broadened sections of adjacent stent struts are staggered along an axis of the stent mesh. The different widths of the broadened sections and the main sections, as well as the staggered arrangement of the broadened sections, enable reasonable space utilization and achieve a good tradeoff between metal coverage and radial strength of the stent.

Abstract: A method for fabricating a 3D memory device includes forming a sacrificial layer over a substrate, forming a first dielectric stack over the sacrificial layer, forming a channel hole structure, forming an opening that exposes the sacrificial layer, removing the sacrificial layer to create a cavity and expose a part of the channel hole structure, forming a semiconductor layer to fill the cavity, filling the opening with a filling structure, and forming a second dielectric stack over the filling structure. The opening is made for a gate line slit (GLS) structure.

Abstract: A semiconductor structure includes: a substrate; a first dielectric layer, located on the substrate; and a pad structure, located on the first dielectric layer. The first dielectric layer has at least one support layer. The pad structure is located above the support layer. A material strength of the support layer is greater than a material strength of the first dielectric layer.

Abstract: Embodiments of the disclosure relate to the field of semiconductor technologies, and provide a layout and a wiring method, a comparison method, a fabrication method, a device, and a storage medium. The layout wiring method includes: obtaining names of all ports in a layout, each port has a first node and a second node; detecting whether the first node and the second node of each port are each connected to any other port through an actual connection layer, and if not, taking a port of which the first node and/or the second node are not connected to the actual connection layer as a port to be connected; and connecting at least two ports to be connected having the same name using a virtual connection layer.