Abstract: The present application discloses a computing apparatus and a heat dissipation apparatus, where the computing apparatus includes: a circuit board, a first surface of which is provided with at least one computing unit; a first heat dissipation assembly, arranged on a second surface of the circuit board, the second surface being opposite to the first surface; and at least one second heat dissipation assembly, correspondingly arranged on a package of the at least one computing unit, respectively. Through the present application, a heat dissipation efficiency of the computing apparatus can be improved.

Abstract: The present disclosure relates to an ultrasonic probe and an ultrasonic diagnostic device. The ultrasonic probe includes a transducer configured to transmit and receive ultrasonic signals, a housing, and a support member. The support member includes one end connected to the housing and another end connected to the transducer. By arranging the support member, the transducer is connected to the housing through the support member.

Abstract: A heat dissipation apparatus, includes: a heat spreading structure and a first surface heat dissipation structure; where the heat spreading structure at least includes a first surface and a second surface which are oppositely arranged, the first surface is connected with a package of a chip to be heat dissipated; and the first surface heat dissipation structure is formed on the second surface by a copper powder spraying process. In the present disclosure, by the copper powder spraying process, the first surface heat dissipation structure formed has a higher adhesion strength, and a morphology of the first surface heat dissipation structure can be adjusted, thereby increasing the number of vaporization core and enhancing the boiling heat exchange effect of the heat dissipation apparatus.

Abstract: The present disclosure relates to a chip module, a circuit board and an electronic device. The chip module includes: a chip; a heat-dissipating metal sheet, and a thermal conductive layer located between the chip and the heat-dissipating metal sheet, where a thermal conductive material included in the thermal conductive layer is a phase change material or a thermal conductive paste.

Abstract: Provided are a power distribution unit and a rack system. The power distribution unit includes: a terminal block (1) having an input terminal (11) for power supply and a lead-out terminal (12) for power supply; at least one wiring pad (2) respectively electrically connected to the lead-out terminal (12); a plurality of power output terminal groups (3), each power output terminal group (3) being composed of at least one power output terminal (31), and each power output terminal (31) being electrically connected to a respective wiring pad (2); and a plurality of switch mechanisms (4) provided in such a way that a switch mechanism (4) is correspondingly provided for a power output terminal group (3), where the switch mechanism (4) causes the corresponding power output terminal group (3) to be electrically connected to or electrically disconnected from the corresponding wiring pad (2).

Abstract: Various implementations disclosed herein include devices, systems, and methods that determine a user location within a physical environment. For example, an example process may include obtaining an object relationship model representing positional relationships between objects of a set of objects within a physical environment. The process may further include obtaining sensor data of the physical environment. The process may further include detecting an interaction of a user with an object of the set of objects within the physical environment based on the sensor data. The process may further include determining a location of the user within the physical environment based on a location associated with the object in the physical environment.

Abstract: The present invention relates to a 600° C./1 GPa high-temperature ultra-high strength Ti alloy and a preparation method therefor, and belongs to an alloy system of Ti—Al—Zr—Sn—Si plus refractory metals. The 600° C./1 GPa high-temperature ultra-high strength Ti alloy comprises the following main components by mass percent: 5.2 wt. %-6.0 wt. % of Al, 6.2 wt. %-12.5 wt. % of Zr, 5.8 wt. %-6.5 wt. % of Sn, 0.3 wt. %-1.5 wt. % of Si and the balance of Ti element, refractory metals and other unavoidable impurities. Firstly, an alloy is prepared after incoming materials quality inspection. Secondly, a high-melting point master alloy and a low-melting point Al—Sn master alloy are respectively prefabricated to inhibit the uneven dissolution of elements and improve the microstructure homogeneity. Finally, the alloy blocks are subjected to vacuum arc melting to prepare an alloy.

Abstract: Systems and processes for locating objects and environmental mapping are provided. For example, a device may receive an input including a reference to a first object, wherein the input includes a request for a location of the first object, and the first object is located in a physical environment. The device may determine a location of the first object, and in response to receiving the input, if first criteria are met, provide a description of the location, wherein a criterion of the one or more first criteria is met when the location is available, and the description includes a relationship between the first object and a reference within the physical environment. If second criteria are met, the device may forgo providing the description of the location, wherein a criterion of the one or more second criteria is met when the location is not available.

Abstract: An ammonolysis solution and an ammonolysis method. The ammonolysis solution comprises amine, butanol, amino alcohol, and an alkaline aqueous solution. The ammonolysis method comprises: (1) adding an ammonolysis solution to a solid-phase synthesis column where a solid phase carrier is contained; (2) placing the solid-phase synthesis column into a sealed container where an ammonolysis buffer solution is contained, and keeping the solid-phase synthesis column from contacting with the ammonolysis buffer solution; (3) heating the sealed container, so that the solid phase carrier is under a steam atmosphere of the ammonolysis buffer solution, and then cooling; and (4) taking the solid-phase synthesis column out of the sealed container, treating the solid phase carrier in the solid-phase synthesis column using an eluent, and collecting an effluent liquid. The ammonolysis solution is mild in formula.