Abstract: A method of preparing PAN-based carbon fibers relates to the technical field of materials. The method includes: S1. acrylonitrile, a second monomer and an unsaturated UV-sensitive cross-linking agent are mixed, an initiator is then added and a reaction is performed to obtain a meltable PAN-based copolymer; S2. the meltable PAN-based copolymer and a flow modifier are mixed to obtain a mixture, the mixture is extruded and pelletized, and then melt spinning is performed to obtain nascent fibers, the nascent fibers are stretched and annealed to obtain a PAN-based carbon fiber precursor; S3. ultraviolet irradiation is performed on the PAN-based carbon fiber precursor; S4. the PAN-based carbon fiber precursor after ultraviolet irradiation is pre-oxidized and carbonized to obtain PAN-based carbon fibers.

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.