Abstract: This application provides a method for transmitting control information and an apparatus. The method includes: When a time domain resource for transmitting first control information on a first PUCCH conflicts in a first time unit with a time domain resource for transmitting a first transport block on a first PUSCH, a terminal device determines, based on a relationship between a payload size of the first control information and a first threshold, a first time domain resource for transmitting the first control information. The first threshold is a maximum quantity of bits of the first control information that can be sent by the terminal device in the first time unit without generating a first result. The first result is that some information bits in the first transport block cannot be transmitted. The terminal device transmits the first control information on the first time domain resource.

Abstract: This invention discloses a method for fabricating SOI material, incorporating an amorphous process introduced by ion implantation in the conventional SIMOX methods, which enhances diffusion of various atoms in the amorphous region in annealing process. It realizes under a lower temperature annealing to eliminate threading dislocations and other crystal defects in the top silicon layer and silicon islands, pinholes and other silicon segregation products in the buried oxide layer and fabricate high quality of SOI material. Another method for forming SOI material is also described, incorporating an amorphous process introduced by ion implantation in the SIMNI or SIMON methods. It forms amorphous buried nitride or oxynitride layer, a top single crystal silicon layer and a sharp interface between the top layer and the buried layer.

Abstract: This invention discloses a method for fabricating SOI material, incorporating an amorphous process introduced by ion implantation in the conventional SIMOX methods, which enhances diffusion of various atoms in the amorphous region in annealing process. It realizes under a lower temperature annealing to eliminate threading dislocations and other crystal defects in the top silicon layer and silicon islands, pinholes and other silicon segregation products in the buried oxide layer and fabricate high quality of SOI material. Another method for forming SOI material is also described, incorporating an amorphous process introduced by ion implantation in the SIMNI or SIMON methods. It forms amorphous buried nitride or oxynitride layer, a top single crystal silicon layer and a sharp interface between the top layer and the buried layer.