Patents by Inventor Zhiheng SU

Zhiheng SU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Trench MOS device with improved single event burn-out endurance
    Patent number: 10546951
    Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.
    Type: Grant
    Filed: September 17, 2016
    Date of Patent: January 28, 2020
    Assignees: University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong
    Inventors: Min Ren, Yuci Lin, Chi Xie, Zhiheng Su, Zehong Li, Jinping Zhang, Wei Gao, Bo Zhang
  • TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE
    Publication number: 20190371937
    Abstract: A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby. the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.
    Type: Application
    Filed: September 17, 2016
    Publication date: December 5, 2019
    Applicants: University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong
    Inventors: Min REN, Yuci LIN, Chi XIE, Zhiheng SU, Zehong LI, Jinping ZHANG, Wei GAO, Bo ZHANG