Abstract: The present application discloses a method and a model for controlling an energy storage system for rail transit, a device, and a storage medium. The method includes: determining an offline charging-discharging action according to a state of an energy storage system based on an offline algorithm; determining an online charging-discharging action according to the state of the energy storage system based on a deep reinforcement learning algorithm; acquiring a fusion ratio of the offline charging-discharging action to the online charging-discharging action according to a communication delay amount and a delay degree; and fusing the offline charging-discharging action and the online charging-discharging action according to the fusion ratio and outputting a fusion result to the energy storage system.

Abstract: A control method, device, apparatus and storage medium for a supercapacitor energy storage device is provided, where the method includes: collecting life characterization parameters of the supercapacitor energy storage device and performing life evaluation to obtain a life evaluation result, inputting the life evaluation result into a constructed fuzzy rule base, and outputting a constraint condition adjustment parameter; obtaining a constraint condition according to the constraint condition adjustment parameter, and optimizing control parameters using a genetic algorithm in conjunction with an optimized objective function to obtain first control parameters; and controlling charging and discharging currents of the supercapacitor energy storage device using a droop control method according to the first control parameters.

Abstract: An effective capacity estimation method and system for super capacitor energy storage systems are provided. The method includes: establishing a nonlinear electrical model of supercapacitor cell and an equivalent electrical model of a supercapacitor system; obtaining the first test data by charging the supercapacitor cell; based on the first test data, setting the initial value of parameters of the nonlinear electrical model of the supercapacitor cell by a preset algorithm; using a least-square method to identify the parameters of the nonlinear electrical model of the supercapacitor cell; obtaining electrical parameters of the equivalent electrical model of the supercapacitor system except the connection resistance parameters, carrying out a charging test of the supercapacitor system to obtain the connection resistance parameters, and estimating an effective capacity of the supercapacitor energy storage system based on the equivalent electrical model of the supercapacitor system after parameter identification.

Abstract: A semiconductor device includes a semiconductor substrate, a body region disposed in the semiconductor substrate and having a first conductivity type, a source region disposed in the semiconductor substrate adjacent the body region and having a second conductivity type, a drain region disposed in the semiconductor substrate, having the second conductivity type, and spaced from the source region to define a conduction path, a gate structure supported by the semiconductor substrate, configured to control formation of a channel in the conduction path during operation, and having a side adjacent the source region that comprises a notch, the notch defining a notch area, and a notch region disposed in the semiconductor substrate in the notch area and having the first conductivity type.

Abstract: A semiconductor device includes a semiconductor substrate, a body region disposed in the semiconductor substrate and having a first conductivity type, a source region disposed in the semiconductor substrate adjacent the body region and having a second conductivity type, a drain region disposed in the semiconductor substrate, having the second conductivity type, and spaced from the source region to define a conduction path, a gate structure supported by the semiconductor substrate, configured to control formation of a channel in the conduction path during operation, and having a side adjacent the source region that comprises a notch, the notch defining a notch area, and a notch region disposed in the semiconductor substrate in the notch area and having the first conductivity type.

Abstract: The oxide matrix composite material is obtained by subjecting a fiber composed of at least one oxide or complex oxide and a matrix composed of at least one oxide or complex oxide to composite formation. For the fiber and the matrix, a component composition is selected such that the fiber and the matrix keep thermodynamic equilibrium to each other in a temperature range not exceeding the melting temperature, and a fiber diameter of the fiber at the time of equilibrium keeps ½ or more of a fiber diameter of the fiber at the start of the composite formation.