Abstract: The present invention relates to the technical field of identification on adulterated meat, and in particular, to a method for identifying raw meat and high-quality fake meat based on a gradual linear array change of a component. The present invention spatially characterizes changing rules of featured components in the meat with the utilization of sensitivities of the visible/near-infrared spectral signals to changes of the components in the meat and the advantage that spectral scanning can acquire optical signals of the samples spatially and consecutively, further constructs the identification model according to differences in components and spectra of a region of interest in the hyperspectral image by taking a derivative for characterizing rates of change of the featured components.

Abstract: Bonding pedestals on substrates, and their manufacture, for direct bonding integrated circuit (IC) dies onto substrates. The electrical interconnections of one or more IC dies and a substrate are bonded together with the IC dies on and overhanging the pedestals. A bonding pedestal may be formed by etching down the substrate around the interconnections. A system may include one or more such pedestals above and adjacent a recessed surface on a substrate with IC dies overhanging the pedestals. Such a system may be coupled to a host component, such as a board, and a power supply via the host component.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for attaching dummy dies to a wafer that includes a plurality of active dies, where the dummy dies are placed along or in dicing streets where the wafer is to be cut during singulation. In embodiments, the dummy dies may be attached to the wafer using a die attach film, or may be attached using hybrid bonding. Other embodiments may be described and/or claimed.

Abstract: A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

Abstract: Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.

Abstract: A system for determining thickness variation values of a semiconductor substrate comprises a substrate vacuumed to a pedestal that defines a reference plane for measuring the substrate. A measurement probe assembly determines substrate CTV and BTV values, and defines a substrate slope angle. A thermal bonding assembly attaches a die to the substrate at a bonding angle congruent with the substrate slope angle. A plurality of substrates are measured using the same reference plane on the pedestal. Associated methods and processes are disclosed.

Abstract: Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.

Abstract: Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.

Abstract: Inspection of microelectronic devices is described using near infrared light. In one example, a dielectric material layer on a substrate is illuminated with a near infrared light beam. The substrate has at least one contact land, the dielectric material layer overlies at least a portion of the contact land, and the substrate has at least one via defined in the dielectric material layer, the via exposing at least a portion of the contact land. Reflected near infrared light is reflected from the substrate at a camera. The position of the via is determined relative to the contact land from the reflected light beam using an image processing device.

Abstract: The present disclosure relates to the field of microelectronic substrate fabrication and, more particularly, to alignment inspection for vias formed in the microelectronic substrates. The alignment inspection may be achieved by determining the relative positions of fluorescing and non-fluorescing elements in a microelectronic substrate.

Abstract: The present disclosure relates to the field of microelectronic substrate fabrication and, more particularly, to alignment inspection for vias formed in the microelectronic substrates. The alignment inspection may be achieved by determining the relative positions of fluorescing and non-fluorescing elements in a microelectronic substrate.