Abstract: Embodiments of the present disclosure pertain to compositions comprising particles and a binding material, where the binding material and at least some of the particles are breakably associated with one another to form bound particles. Additional embodiments of the present disclosure pertain to methods of making the compositions by associating particles with a binding material such that the binding material and at least some of the particles become breakably associated with one another to form bound particles. Further embodiments of the present disclosure pertain to methods of additively manufacturing a material on a surface by (a) applying said bound particles onto the surface; (b) breaking at least some of the bound particles into particles; (c) applying an adhesive material onto the surface; and (d) treating the particles and any remaining bound particles to form the additively manufactured material. Additional embodiments pertain to the formed additively manufactured materials.

Abstract: A process for detecting mechanical and mechanochemical defects in the surface or edge of a silicon wafer resulting from a wafer manufacturing process. The present process comprises treating a surface of the silicon wafer with an aqueous etch solution comprising hydrofluoric acid and an oxidizing agent, followed by optical inspection of the treated wafer surface prior to subjecting that surface to conventional mechanical or mechanochemical polishing. The present process affords the means by which to more efficient identify wafers having such defects, thus reducing wafer manufacturing time and cost.

Abstract: A method of processing a semiconductor wafer comprises rough grinding the front and back surfaces of the wafer to quickly reduce the thickness of the wafer. The front and back surfaces are then lapped with a lapping slurry to further reduce the thickness of the wafer and reduce damage caused by the rough grinding. Lapping time is reduced by provision of the rough grinding step. The wafer is etched in a chemical etchant to further reduce the thickness of the wafer and the front surface of the wafer is polished using a polishing slurry to reduce the thickness of the wafer down to a predetermined final wafer thickness. A fine grinding step may be added to eliminate lapping and/or reduce polishing time.