Patents by Inventor Zhijiang Dong

Zhijiang Dong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Antenna Structure with Bracket Antenna and Methods for Use Therewith
    Publication number: 20160261024
    Abstract: An antenna section includes a bracket antenna configured to send and receive RF communications of a mobile communication device having a back side that is enclosed by a back cover, wherein the bracket antenna forms a structural portion of the back cover of the mobile communication device that encloses at least one portion of an edge of the mobile communication device and at least one portion of the back side. A booster plate is coupled to the mobile communication device and is configured to electromagnetically interact with the bracket antenna to modify the antenna beam pattern.
    Type: Application
    Filed: March 31, 2015
    Publication date: September 8, 2016
    Applicant: BROADCOM CORPORATION
    Inventors: Henrik Tholstrup Jensen, Zhijiang Dong
  • Epitaxial structure with an epitaxial defect barrier layer
    Patent number: 8492745
    Abstract: An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer.
    Type: Grant
    Filed: October 27, 2011
    Date of Patent: July 23, 2013
    Assignee: Aqualite Co., Ltd.
    Inventors: Hongjian Li, Changtao Ai, Jiangbo Li, Caixia Jin, Zhijiang Dong
  • Epitaxial Structure With An Epitaxial Defect Barrier Layer And Methods Making The Same
    Publication number: 20120138947
    Abstract: An epitaxial structure for an LED is provided. The epitaxial structure includes a patterned epitaxial defect barrier layer disposed over a first portion of a substantially flat substrate to expose a second portion of the substrate. The epitaxial structure also includes a patterned buffer layer over the second portion of the substrate. The epitaxial structure further includes a first semiconductor layer over the patterned buffer layer and the patterned epitaxial defect barrier layer, an active layer over the first semiconductor layer, and a second semiconductor layer over the active layer.
    Type: Application
    Filed: October 27, 2011
    Publication date: June 7, 2012
    Inventors: Hongjian Li, Changtao Ai, Jiangbo Li, Caixia Jin, Zhijiang Dong