Patents by Inventor Zhijiong Lou

Zhijiong Lou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Asymmetric source/drain junctions for low power silicon on insulator devices
    Patent number: 7977178
    Abstract: A semiconductor device includes a buried insulator layer formed on a bulk substrate; a first type semiconductor material formed on the buried insulator layer, and corresponding to a body region of a field effect transistor (FET); a second type of semiconductor material formed over the buried insulator layer, adjacent opposing sides of the body region, and corresponding to source and drain regions of the FET; the second type of semiconductor material having a different bandgap than the first type of semiconductor material; wherein a source side p/n junction of the FET is located substantially within whichever of the first and the second type of semiconductor material having a lower bandgap, and a drain side p/n junction of the FET is located substantially entirely within whichever of the first and the second type of semiconductor material having a higher bandgap.
    Type: Grant
    Filed: March 2, 2009
    Date of Patent: July 12, 2011
    Assignee: International Business Machines Corporation
    Inventors: Seong-Dong Kim, Zhijiong Lou, Huilong Zhu