Patents by Inventor ZhiKang Lan

ZhiKang Lan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11401156
    Abstract: The present invention discloses a micro-electro-mechanical system silicon on insulator (MEMS SOI) pressure sensor and a method for preparing the same. The pressure sensor includes a bulk silicon layer, a buried oxide layer, a substrate, a varistor, a passivation layer, and an electrode layer. The varistor is obtained by means of photolithography and ion implantation on a device layer of an SOI wafer. The passivation layer is SiO2 formed by means of annealing treatment on the SOI wafer. An annealing atmosphere is one of pure O2, a gas mixture of O2/H2O, a gas mixture of O2/NO, a gas mixture of O2/HCl, and a gas mixture of O2/CHF3. By means of the annealing treatment, the damage to a surface of the buried oxide layer as a result of over-etching during formation of the varistor by means of photolithography is eliminated and the unstability of the sensor caused by body and interface defects of the passivation layer and trapped charges thereof is resolved.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: August 2, 2022
    Assignee: SOUTHEAST UNIVERSITY
    Inventors: Xiaodong Huang, Zhikang Lan, Pengfei Zhang
  • Publication number: 20220033247
    Abstract: The present invention discloses a micro-electro-mechanical system silicon on insulator (MEMS SOI) pressure sensor and a method for preparing the same. The pressure sensor includes a bulk silicon layer, a buried oxide layer, a substrate, a varistor, a passivation layer, and an electrode layer. The varistor is obtained by means of photolithography and ion implantation on a device layer of an SOI wafer. The passivation layer is SiO2 formed by means of annealing treatment on the SOI wafer. An annealing atmosphere is one of pure O2, a gas mixture of O2/H2O, a gas mixture of O2/NO, a gas mixture of O2/HCl, and a gas mixture of O2/CHF3. By means of the annealing treatment, the damage to a surface of the buried oxide layer as a result of over-etching during formation of the varistor by means of photolithography is eliminated and the unstability of the sensor caused by body and interface defects of the passivation layer and trapped charges thereof is resolved.
    Type: Application
    Filed: October 20, 2021
    Publication date: February 3, 2022
    Inventors: Xiaodong Huang, Zhikang Lan, Pengfei Zhang
  • Patent number: 10203233
    Abstract: A flow sensing module is provided for determining a flow rate of a fluid flowing through a flow channel. The flow sensing module may include an integrated flow restrictor, sometimes including a plurality of concentric ribs defining a plurality of orifices shaped to match the curvature of the wall of the flow channel. A first sensing port may open into the flow channel upstream of the flow restrictor, and a second sensing port may open into the flow channel downstream of the flow restrictor. A flow rate of a fluid flowing through the flow channel may be determining using a differential pressure between the first and second ports created by the flow restrictor, either using a flow sensor or a pressure sensor. The particular arrangement and relative dimensions of the orifices of the flow restrictor and the pressure ports can result in substantially reduced noise.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: February 12, 2019
    Assignee: Honeywell International Inc.
    Inventors: Ruifeng Zhang, Jamie Speldrich, ZhiKang Lan, Ru Wang
  • Publication number: 20170292864
    Abstract: A flow sensing module is provided for determining a flow rate of a fluid flowing through a flow channel. The flow sensing module may include an integrated flow restrictor, sometimes including a plurality of concentric ribs defining a plurality of orifices shaped to match the curvature of the wall of the flow channel. A first sensing port may open into the flow channel upstream of the flow restrictor, and a second sensing port may open into the flow channel downstream of the flow restrictor. A flow rate of a fluid flowing through the flow channel may be determining using a differential pressure between the first and second ports created by the flow restrictor, either using a flow sensor or a pressure sensor. The particular arrangement and relative dimensions of the orifices of the flow restrictor and the pressure ports can result in substantially reduced noise.
    Type: Application
    Filed: August 29, 2014
    Publication date: October 12, 2017
    Inventors: Ruifeng Zhang, Jamie Speldrich, ZhiKang Lan, Ru Wang