Abstract: A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.

Abstract: The present invention discloses a logging encapsulated optical-fiber duct cable and a manufacturing method thereof. The encapsulated optical-fiber duct cable mainly comprises an external encapsulation layer. At least one armor tube is arranged in the encapsulation layer. An optical fiber protective tube is arranged in each armor tube. A filling layer is arranged in a space between the optical fiber protective tube and the armor tube. An optical fiber is arranged in the optical fiber protective tube. The manufacturing method mainly comprises four steps: pavement of the optical fiber and formation of the protective tube, formation of the filling layer, formation of the armor tube and formation of the encapsulation layer. The optical-fiber duct cable of the present invention has the advantages of large length, high strength, good temperature tolerance, small signal transmission loss, high transmission speed and synchronous transmission of multiple signals.

Abstract: This application discloses an advertisement information processing method. The method includes a first node receives, in a first IGP process, first advertisement information that is sent by a second node and that includes a destination address of the second node and a first identifier indicating, in the first IGP process, a first flexible algorithm. The first node determines whether the first identifier indicates, in a second IGP process, a flexible algorithm the same as the first flexible algorithm. When the first identifier does not indicate, in the second IGP process, the flexible algorithm the same as the first flexible algorithm, the first node advertises, in the second IGP process, second advertisement information that includes the destination address and a second identifier indicating, in the second IGP process, a second flexible algorithm, or skips advertising third advertisement information that includes the destination address.

Abstract: The present invention discloses a precise etching apparatus for preparing a recessed-gate enhancement device and an etching method for the same. The apparatus provided by the present invention includes an inductively-coupled plasma etching chamber, a current detection device, an inductive coil, a radio frequency source, a mechanical pump, and a molecular pump. The current detection device is connected with the inductively-coupled plasma etching chamber. The inductive coil is connected with the inductively-coupled plasma etching chamber. The radio frequency source is connected with the inductive coil. The mechanical pump and the molecular pump are connected with the inductively-coupled plasma etching chamber.

Abstract: A GaN-HEMT device with a sandwich structure and a method for preparing the same are provided. The GaN-HEMT device includes an epitaxial layer and electrodes, wherein the epitaxial layer includes a GaN channel layer (2) and an AlyGa1-y barrier layer (1), and is arranged from top to bottom; the electrodes include a gate electrode (6), a source electrode (7), a drain electrode (5) and a field plate electrode (10), wherein the field plate electrode (10) and the gate electrode (6) are respectively fabricated on an upper surface and a lower surface of the epitaxial layer, and the field plate electrode (10) extends to a region beyond the epitaxial layer and is connected with the gate electrode (6) to form the sandwich structure, and the source electrode (7) and the drain electrode (5) are respectively located at two ends of the epitaxial layer.

Abstract: The present invention discloses a logging encapsulated optical-fiber duct cable and a manufacturing method thereof. The encapsulated optical-fiber duct cable mainly comprises an external encapsulation layer. At least one armor tube is arranged in the encapsulation layer. An optical fiber protective tube is arranged in each armor tube. A filling layer is arranged in a space between the optical fiber protective tube and the armor tube. An optical fiber is arranged in the optical fiber protective tube. The manufacturing method mainly comprises four steps: pavement of the optical fiber and formation of the protective tube, formation of the filling layer, formation of the armor tube and formation of the encapsulation layer. The optical-fiber duct cable of the present invention has the advantages of large length, high strength, good temperature tolerance, small signal transmission loss, high transmission speed and synchronous transmission of multiple signals.

Abstract: Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.

Abstract: Provided are a low-temperature SCR catalyst for denitrating diesel vehicle exhaust, and preparation method thereof. The catalyst uses a molecular sieve as a carrier, and uses metallic elements such as copper and iron as active components. The catalyst preparation method comprises: preprocessing the molecular sieve; conducting multiple equal-volume impreparations; after impreparation, drying to dehydrate, and calcining; and finally pulping and coating to prepare the catalyst. The catalyst employs base metals such as copper and iron instead of precious metals as active components, thus reducing costs, being harmless to humans, and being environmentally friendly.

Abstract: Methods of forming porous nano-scale or micro-scale structured materials and structured materials formed thereby. Such methods entail providing a donor material and reacting the donor material to form a compound that deposits on a surface of a substrate to produce nano-scale or micro-scale geometric features of the structured material. In particular embodiments, the donor material is in a solution and the reacting step is performed by contacting the surface of the substrate with the solution and directing heat through the solution onto the surface to locally heat a portion of the solution in contact therewith.

Abstract: Provided are a low-temperature SCR catalyst for denitrating diesel vehicle exhaust, and preparation method thereof. The catalyst uses a molecular sieve as a carrier, and uses metallic elements such as copper and iron as active components. The catalyst preparation method comprises: preprocessing the molecular sieve; conducting multiple equal-volume impreparations; after impreparation, drying to dehydrate, and calcining; and finally pulping and coating to prepare the catalyst. The catalyst employs base metals such as copper and iron instead of precious metals as active components, thus reducing costs, being harmless to humans, and being environmentally friendly.