Abstract: A three-dimensional (3D) memory device includes a stack structure including interleaved first conductive layers and first dielectric layers, and a channel structure extending through the stack structure along a first direction in contact with a first semiconductor layer at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The semiconductor channel includes an angled structure, and a first width of the semiconductor channel at the bottom portion of the channel structure below the angled structure is smaller than a second width of the semiconductor channel at an upper portion of the channel structure above the angled structure.

Abstract: Certain embodiments are directed to the use of amide coupling chemistry to covalently link five different biofunctional groups onto an anionic water soluble poly(phenylene ethynylene) (PPE) polymer. Two of the biofunctionalized PPEs are used in prototype applications, including pH sensing and flow cytometry labeling.

Abstract: Provided is a higher manganese silicide based telluride composite for thermoelectric conversion, represented by the following general formula (1): (MnsSi1.740±0.015)1?x(MnTe)x??(1) wherein x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0<x?0.10, and the maximum ZT value is 0.40 or more.

Abstract: The inventors describe the use of a polymeric marker, in certain aspects the polymeric marker is conjugated polymeric marker such as P-C-3. Other aspects are directed to methods of analyzing the conjugated marker fluorescence spectral shape, which is strongly dependent on the local/ionic environment. This fluorescence marker is able to interact with and classify various analytes.

Abstract: Provided is a higher manganese silicide based telluride composite for thermoelectric conversion, represented by the following general formula (1): (MnsSi1.740±0.015)1x(MnTe)x??(1) wherein x is the molar fraction of manganese telluride in the higher manganese silicide based telluride composite for thermoelectric conversion and satisfies the relation 0<x?0.10, and the maximum ZT value is 0.40 or more.