Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.

Abstract: Methods of season chamber components, methods of processing substrates, and seasoned chamber components are provided. Methods include flowing one or more deposition precursors at a deposition temperature into a substrate processing region of a semiconductor processing chamber housing the semiconductor processing chamber component. Methods include where the substrate processing region includes an electrostatic chuck, and the one or more deposition precursors are generally free of a nitride precursor. Methods include depositing at least a first seasoning layer on the semiconductor processing chamber component, where the at least the first seasoning layer has a thickness of greater than 0.5 ?m.

Abstract: A semiconductor processing chamber may include a pedestal configured to support a substrate during a plasma-enhanced chemical-vapor deposition (PECVD) process that forms a film on a surface of the substrate. The chamber may also include one or more internal meshes embedded in the pedestal. The one or more internal meshes may be configured to deliver radio-frequency (RF) power to a plasma in the semiconductor processing chamber during the PECVD process. An outer diameter of the one or more internal meshes may be less that a diameter of the substrate. The chamber may further include an RF source configured to deliver the RF power to the one more internal meshes. This configuration may reduce arcing within the processing chamber.

Abstract: A method includes obtaining, by a processing device, first data indicative of overlay error of a substrate. The method further includes generating second data indicative of first stress uniformity of the substrate based on the first data. The method further includes performing a corrective action based on the second data.