Patents by Inventor Zhilyaev Yuri Vasilievich

Zhilyaev Yuri Vasilievich has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of growing a nitride single crystal on silicon wafer, nitride semiconductor light emitting diode manufactured using the same and the manufacturing method
    Patent number: 7612361
    Abstract: The invention provides a method for growing a nitride single crystal on a silicon wafer and a method for manufacturing a light emitting device using the same. In growing the nitride single crystal according to one aspect of the invention, first, a silicon substrate having a surface in (111) crystal orientation is prepared. A first nitride buffer layer is formed on the surface of the silicon substrate. Then, an amorphous oxide film is disposed on the first nitride buffer layer. A second buffer layer is disposed on the amorphous oxide film. Thereafter, the nitride single crystal is formed on the second nitride buffer layer.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: November 3, 2009
    Assignees: Samsung Electro-Mechanics Co., Ltd., Ioffe Physico-Technical Institute RAS
    Inventors: Hee Seok Park, Zhilyaev Yuri Vasilievich, Bessolov Vasiliy Nikolaevich