Patents by Inventor Zhimin James Yao

Zhimin James Yao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION
    Publication number: 20240194532
    Abstract: A method includes providing a first chip having a circuit element layer stack, the circuit element layer stack including a plurality of circuit elements distributed across a plurality of layers. The circuit element layer stack has a sacrificial material filling a space between the plurality of circuit elements in the plurality of layers and a coherent device layer disposed on the circuit element layer stack. The method includes removing the sacrificial material.
    Type: Application
    Filed: December 13, 2022
    Publication date: June 13, 2024
    Inventors: Zhimin Jamie Yao, Michael C. Hamilton, Marissa Giustina, Brian James Burkett, Theodore Charles White, Ofer Naaman
  • MULTI-LAYER CHIP ARCHITECTURE AND FABRICATION
    Publication number: 20240194661
    Abstract: A method includes providing a first chip having a circuit element layer stack, the circuit element layer stack including a plurality of circuit elements distributed across a plurality of layers. The circuit element layer stack has a sacrificial material filling a space between the plurality of circuit elements in the plurality of layers and a coherent device layer disposed on the circuit element layer stack. The method includes removing the sacrificial material.
    Type: Application
    Filed: December 13, 2022
    Publication date: June 13, 2024
    Inventors: Zhimin Jamie Yao, Michael C. Hamilton, Marissa Giustina, Brian James Burkett, Theodore Charles White, Ofer Naaman
  • Lateral semiconductor light emitting diodes having large area contacts
    Patent number: 9397266
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Grant
    Filed: January 20, 2014
    Date of Patent: July 19, 2016
    Assignee: CREE, INC.
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin James Yao
  • LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS
    Publication number: 20140151735
    Abstract: Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts.
    Type: Application
    Filed: January 20, 2014
    Publication date: June 5, 2014
    Applicant: CREE, INC.
    Inventors: Matthew Donofrio, James Ibbetson, Zhimin James Yao