Patents by Inventor Zhimin Song

Zhimin Song has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PACKAGE COMPRISING A SUBSTRATE AND A HIGH-DENSITY INTERCONNECT INTEGRATED DEVICE
    Publication number: 20220149005
    Abstract: A package comprising a substrate, a first integrated device coupled to the substrate, a second integrated device coupled to the substrate, an interconnect integrated device coupled to the first integrated device and the second integrated device, and an underfill. The substrate includes a cavity. The interconnect integrated device is located over the cavity of the substrate. The underfill is located (i) between the first integrated device and the substrate, (ii) between the second integrated device and the substrate, (iii) between the interconnect integrated device and the first integrated device, and (iv) between the interconnect integrated device and the second integrated device.
    Type: Application
    Filed: November 10, 2020
    Publication date: May 12, 2022
    Inventors: Yangyang SUN, Li-Sheng WENG, Zhimin SONG
  • MEMORY CELL SUPPORT LATTICE
    Publication number: 20160043089
    Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
    Type: Application
    Filed: October 7, 2015
    Publication date: February 11, 2016
    Inventors: Zhimin Song, Che-Chi Lee, Brett Busch
  • Memory cell support lattice
    Patent number: 9184167
    Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: November 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Zhimin Song, Che-Chi Lee, Brett Busch
  • MEMORY CELL SUPPORT LATTICE
    Publication number: 20140054745
    Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.
    Type: Application
    Filed: August 21, 2012
    Publication date: February 27, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Zhimin Song, Che-Chi Lee, Brett Busch