Abstract: Provided are a communication network switching apparatus, a communication network switching system, and a communication network switching method. The apparatus includes a first communication network interface, a second communication network interface, a processor, a communication network switch, and a device access interface. The communication network switch is configured to switch, according to the control signal of the processor, the connection manner with the first communication network interface and the second communication network interface and connect the first communication network or the second communication network to the processor. The processor is connected to the device access interface and is configured to connect a target communication network connected through the communication network switch to a target device connected to the device access interface.

Abstract: A heat exchange apparatus includes a heat exchanger, a refrigerant adjustment component, and a first connecting member. The heat exchanger includes a first pipe, a second pipe, a plurality of heat exchange tubes connecting the first pipe and the second pipe, and an edge plate located on an outer side of the plurality of heat exchange tubes in a length direction of the first pipe. At least part of the refrigerant adjustment component is located on an outer side of the edge plate in the length direction of the first pipe. An included angle between an axis in a length direction of at least part of an outer wall of the refrigerant adjustment component and an axis in the length direction of the first pipe is greater than 0° and less than or equal to 90°.

Abstract: The disclosure relates to a method, an apparatus for traffic congestion control, a computer-readable medium, and an electronic device. The method includes: allocating a network card bandwidth to a virtual machine on a same physical machine, where the network interface of the virtual machine is used for transmitting traffic of first and second transmission protocols; for any virtual machine on the physical machine, dividing a total bandwidth of the virtual machine into a first bandwidth, a second bandwidth, and a buffer bandwidth, where the first bandwidth is used to transmit traffic of the first transmission protocol, and the second bandwidth is used to transmit traffic of the second transmission protocol; and reallocating a bandwidth of the first and second transmission protocols based on the actual bandwidth used by the first and second transmission protocols.

Abstract: The methods and apparatus provide phase-resolved optical metrology for determining qualities of a substrate and films thereon. Transmitted and reflected signals are coupled using both amplitude and phase information to improve the metrology information obtained from film layers on the substrate.

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.

Abstract: Provided herein are hip implant devices and related surgical methods. The hip implants and methods can optionally be used in patients of Asian descent.

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

Abstract: Provided herein are hip implant devices and related surgical methods. The hip implants and methods can optionally be used in patients of Asian descent.

Abstract: Provided herein is a femoral component of a hip implant device, comprising a neck having a central axis; and a body distal to the neck and having a tapered portion, wherein the body has a largest cross section perpendicular to the neck central axis, the largest cross section perpendicular to the neck central axis having a maximum height dimension and a maximum width dimension, wherein the maximum width dimension is 18.5 mm or less. The hip implant can optionally be used in patients of Asian descent.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract: Provided herein are hip implant devices and related surgical methods. The hip implants and methods can optionally be used in patients of Asian descent.

Abstract: A method of performing an investigation of a substrate, by measuring a reflectivity of the substrate, comparing the reflectivity of the substrate to an anticipated reflectivity value, selectively subjecting the substrate to a laser beam for a predetermined duration and at a predetermined energy only when the reflectivity of the substrate is within a specified tolerance of the anticipated reflectivity value, selectively signaling a fault condition when the reflectivity of the substrate is not within the specified tolerance of the anticipated reflectivity value, and selectively performing the investigation of the substrate only when the reflectivity of the substrate is within the specified tolerance of the anticipated reflectivity value.