Abstract: A film bulk acoustic resonator and a manufacturing method therefor are provided. The film bulk acoustic resonator includes: a substrate, and a lower electrode, a piezoelectric layer, electrode frame layers and an upper electrode sequentially stacked on the substrate; wherein a cavity is formed between the substrate and the lower electrode, a Q-increasing structure is formed by the lower electrode in a vertical projection range of the cavity, and a first air wing and a first air bridge are formed between the upper electrode and the piezoelectric layer.

Abstract: The present application discloses a bulk acoustic wave resonator and a preparation method thereof. The bulk acoustic wave resonator includes: a substrate, a transducer stacking structure, and a protective layer; the transducer stacking structure is located on one side of the substrate; a cavity is arranged in the substrate; the cavity penetrates through a portion of the substrate; a release channel is arranged in the transducer stacking structure; the release channel penetrates through the transducer stacking structure and is communicated to the cavity; the protective layer is arranged on a surface of one side of the transducer stacking structure away from the substrate; and the protective layer includes a waterproof material.

Abstract: The present application provides a bulk acoustic resonator and a preparation method thereof, and a filter. The bulk acoustic resonator includes: a substrate, wherein the substrate includes a first semiconductor layer, an insulating layer and a second semiconductor layer, which are stacked in sequence; the surface of the second semiconductor layer is etched to form a groove, and the groove penetrates through the second semiconductor layer; and a protection part is formed in the groove, and a vertical section of the groove has a smooth contour.

Abstract: Provided in the embodiments of the present disclosure are an information display method, apparatus, electronic device and storage medium. The method comprises: acquiring audio data of a recommended video of a target object; determining audio clip information of a target audio clip in the recommended video according to the audio data, wherein, the audio clip information comprises identification information and association information, and the target audio clip includes a preset keyword; and when an information acquisition request for the recommended video has been received, sending the audio clip information to a client terminal, such that the client terminal displays the association information if a target video clip corresponding to the target audio clip is played on the client terminal, wherein, the information acquisition request is sent by the client terminal.

Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.

Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.

Abstract: The disclosure provides a film bulk acoustic resonator and a manufacturing method therefor, and a film bulk acoustic wave filter, and relates to the technical field of resonators. The film bulk acoustic resonator includes a substrate, where the substrate is provided with two opposite protective walls protruding out of a surface of the substrate, a cavity is formed between the two protective walls, and an insulating layer is further arranged on one side, away from the cavity, of each protective wall on the substrate; and the film bulk acoustic resonator further includes a transducer stacking structure, where the transducer stacking structure covers the insulating layer, the cavity and the protective walls, and two sides, along a stacking direction, of the transducer stacking structure are in communication with the cavity and the outside respectively.

Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.

Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.