Patents by Inventor Zhipeng DING

Zhipeng DING has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230402993
    Abstract: The present disclosure provides a film bulk acoustic wave resonator and a preparation method thereof, and relates to the technical field of semiconductors. The film bulk acoustic wave resonator includes a substrate and a bottom electrode, a piezoelectric layer and a top electrode which are located on an upper surface of the substrate, the bottom electrode is provided with a first arched part so as to form a first cavity between the first arched part and the substrate; and a first reflection cavity is formed between the bottom electrode and the piezoelectric layer and located in a slope of the first arched part, the bottom electrode is provided with the first arched part and the first reflection cavity may be located in an oblique plane of the slope of the first arched part.
    Type: Application
    Filed: June 2, 2023
    Publication date: December 14, 2023
    Inventors: Chengliang SUN, Yao CAI, Bowoon SOON, Zhipeng DING, Binghui LIN
  • Patent number: 11799440
    Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.
    Type: Grant
    Filed: September 21, 2022
    Date of Patent: October 24, 2023
    Assignee: Wuhan MEMSonics Technologies Co., Ltd.
    Inventors: Zhipeng Ding, Qin Ren, Bowoon Soon, Bangtao Chen, Liyan Siow, Weiliang Teo, Chao Gu, Yan Liu, Binghui Lin
  • Publication number: 20230318557
    Abstract: The present application provides a resonator and a preparation method for a resonator, and relates to the technical field of semiconductors. The method involves introducing a first single crystal substrate to facilitate the epitaxial growth of a high-quality single crystal piezoelectric layer on the first single crystal substrate, and firstly performing ion implantation on the first single crystal substrate to form a damaged layer at a certain depth within it. Therefore, while the first single crystal substrate is removed, it is firstly possible to adopt the heating process, and after the first single crystal substrate is subjected to high-temperature treatment, a first layer and a second layer are split at the damaged layer, thereby a part of the first single crystal substrate is firstly removed, and then the remaining part of the first single crystal substrate is removed by trimming, etching, and other modes.
    Type: Application
    Filed: March 24, 2023
    Publication date: October 5, 2023
    Inventors: Yao CAI, Binghui LIN, Yang ZOU, Dawdon CHEAM, Zhipeng DING, Bowoon SOON, Chengliang SUN
  • Publication number: 20230308073
    Abstract: The disclosure provides a packaging structure and method of an acoustic device, relating the technical field of semiconductors, including: a substrate and a piezoelectric stack structure located on the substrate, a first organic material layer is disposed on the piezoelectric stack structure, a second organic material layer is disposed on the first organic material layer, the first organic material layer includes a first supporting part and a second supporting part, the second supporting part forms a first acoustic reflection structure, when being transmitted to the first acoustic reflection structure, acoustic waves can be reflected back to the effective area, so that the loss of the acoustic waves is reduced, and the performance of the acoustic device is improved.
    Type: Application
    Filed: September 21, 2022
    Publication date: September 28, 2023
    Inventors: Zhipeng DING, Qin REN, Bowoon SOON, Bangtao CHEN, Liyan SIOW, Weiliang TEO, Chao GU, Yan LIU, Binghui LIN
  • Publication number: 20230091745
    Abstract: The disclosure provides a film bulk acoustic resonator and a manufacturing method therefor, and a film bulk acoustic wave filter, and relates to the technical field of resonators. The film bulk acoustic resonator includes a substrate, where the substrate is provided with two opposite protective walls protruding out of a surface of the substrate, a cavity is formed between the two protective walls, and an insulating layer is further arranged on one side, away from the cavity, of each protective wall on the substrate; and the film bulk acoustic resonator further includes a transducer stacking structure, where the transducer stacking structure covers the insulating layer, the cavity and the protective walls, and two sides, along a stacking direction, of the transducer stacking structure are in communication with the cavity and the outside respectively.
    Type: Application
    Filed: September 21, 2022
    Publication date: March 23, 2023
    Inventors: Bangtao CHEN, Zhipeng DING, Bowoon SOON, Liyan SIOW, Feng GAO, Yang ZOU, Chengliang SUN
  • Patent number: 10134607
    Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: November 20, 2018
    Assignee: Agency for Science, Technology and Research
    Inventors: Vivek Chidambaram, Sunil Wickramanayaka, Jinghui Xu, Zhipeng Ding, Li Yan Siow
  • Publication number: 20170178929
    Abstract: A method for bonding wafers is provided. The method comprises the steps of providing a first wafer having an exposed first layer, the first layer comprising a first metal; and providing a second wafer having an exposed second layer, the second layer comprising a second metal, the first metal and the second metal capable of forming a eutectic mixture having a eutectic melting temperature. The method further comprises the steps of contacting the first layer with the second layer; and applying a predetermined pressure at a predetermined temperature to form a solid-state diffusion bond between the first layer and the second layer, wherein the predetermined temperature is below the eutectic melting temperature.
    Type: Application
    Filed: July 9, 2015
    Publication date: June 22, 2017
    Inventors: Vivek CHIDAMBARAM, Sunil WICKRAMANAYAKA, Jinghui XU, Zhipeng DING, Li Yan SIOW