Patents by Inventor ZHIPING YU

ZHIPING YU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Distributed amplifier
    Patent number: 9712124
    Abstract: The present disclosure provides a distributed amplifier, including: a drain transmission line; a gate transmission line; GFETs, in which sources of the graphene field-effect transistors are respectively grounded; gates of the graphene field-effect transistors respectively connected with a plurality of first shunt capacitors which are grounded; the gate transmission line is connected with a plurality of first nodes respectively between the gates of the graphene field-effect transistors and the plurality of first shunt capacitors, having a plurality of first inductors respectively between each two first nodes; drains of the graphene field-effect transistors respectively connected with a plurality of second shunt capacitors which are grounded; the drain transmission line is connected with a plurality of second nodes respectively between the drains of the graphene field-effect transistors and the plurality of second shunt capacitors, having a plurality of second inductors respectively between each two second node
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: July 18, 2017
    Assignee: Tsinghua University
    Inventors: Huaqiang Wu, Hongming Lyu, He Qian, Zhiping Yu, Yilin Huang, Jinyu Zhang
  • DISTRIBUTED AMPLIFIER
    Publication number: 20160254790
    Abstract: The present disclosure provides a distributed amplifier, including: a drain transmission line; a gate transmission line; GFETs, in which sources of the graphene field-effect transistors are respectively grounded; gates of the graphene field-effect transistors respectively connected with a plurality of first shunt capacitors which are grounded; the gate transmission line is connected with a plurality of first nodes respectively between the gates of the graphene field-effect transistors and the plurality of first shunt capacitors, having a plurality of first inductors respectively between each two first nodes; drains of the graphene field-effect transistors respectively connected with a plurality of second shunt capacitors which are grounded; the drain transmission line is connected with a plurality of second nodes respectively between the drains of the graphene field-effect transistors and the plurality of second shunt capacitors, having a plurality of second inductors respectively between each two second node
    Type: Application
    Filed: July 14, 2015
    Publication date: September 1, 2016
    Inventors: HONGMING LYU, ZHIPING YU, YILIN HUANG, JINYU ZHANG, HUAQIANG WU, HE QIAN