Abstract: A display module, including: a first substrate (1); a second substrate (2); a liquid crystal layer (3); the display module further includes a first polarizing film (4), a first one-half wave plate (51) and a first quarter wave plate (52); the first quarter wave plate (52), the first one-half wave plate (51) and the first polarizing film (4) are on a side of the first substrate (1) away from the liquid crystal layer (3) and are sequentially stacked in a direction away from the first substrate (1); an angle between an absorption axis of the first polarizing film (4) and a first direction is in a range of 85° to 105°; an angle between a slow axis of the first one-half wave plate (51) and the first direction is in a range of 105° to 125°.

Abstract: The present disclosure belongs to the technical field of display, and provides an array substrate, a handwriting tablet, a tablet eraser, a handwriting tablet system and a method for erasing a pattern. The array substrate is provided with a handwriting area, and a peripheral area surrounding the handwriting area. The array substrate includes erasing electrodes, which are arranged in an array, and a driving circuit for driving the erasing electrodes, wherein the driving circuit is configured to load, under the irradiation of preset light, an erasing voltage to the erasing electrodes. The array substrate is further provided with an NFC coil, which is used for sending an NFC signal, wherein a sensing range of the NFC coil covers the handwriting area.

Abstract: A sole structure for an article of footwear having a midsole having a support surface extending from a posterior end to an anterior end, the midsole having an outer surface and an inner surface, wherein the support surface and the inner surface surround a cavity, the midsole also including an inner rail extending along the inner surface and into the cavity, wherein the rail and the cavity are configured to engage with a removable outsole.

Abstract: There is provided a projection apparatus, including: a light emitting component configured to generate light; a liquid crystal display panel on a light outgoing side of the light emitting component and including a liquid crystal layer between a first substrate and a second substrate, the liquid crystal layer including cholesteric liquid crystals configured to be in a conical helix texture under an electric field applied, so as to reflect light matched with a helix pitch of the conical helix texture; an optical component between the light emitting component and the liquid crystal display panel, and configured to adjust a propagation direction of light, an acute angle being formed between an optical axis of the optical component and a normal of the liquid crystal display panel; and a projection lens configured to receive and project the light reflected by the liquid crystal display panel. A display system is further provided.

Abstract: Provided is a liquid crystal handwriting board. The liquid crystal handwriting board includes a first substrate, a second substrate, a third substrate, a first liquid crystal layer, and a second liquid crystal layer; wherein the first substrate includes: a first base, and a first pixel electrode and a transparent electrode, wherein the first pixel electrode is insulated from the transparent electrode, and the first pixel electrode is closer to the second substrate than the transparent electrode is; wherein the first substrate, the first liquid crystal layer and the second substrate are configured to form a display portion of the liquid crystal handwriting board; and the first substrate, the second liquid crystal layer and the third substrate are configured to form a writing portion of the liquid crystal handwriting board.

Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A piezoelectric resonator device can be formed to include a piezoelectric film including an active area configured to provide a thickness excited mode of vibration, a first electrode on a first surface of the piezoelectric film positioned to electromechanically couple to the active area, a second electrode on a second surface of the piezoelectric film, opposite the first surface, the second electrode positioned to electromechanically couple to the active area, an energy confinement frame extending on the piezoelectric film embedded in the first or second electrode, an inner side wall of the energy confinement frame facing toward the active area and extending around the active area to define a perimeter that separates the active area located inside the perimeter from an outer area located outside the perimeter adjacent to the active area, an outer side wall of the energy confinement frame facing toward the outer area and aligned to an outer side wall of the first or second electrode and a conformal low-impedan

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.

Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.

Abstract: A piezoelectric resonator can include a substrate and a piezoelectric aluminum nitride layer on the substrate, where the piezoelectric aluminum nitride layer is doped with a dopant selected from the group consisting of Si, Mg, Ge, C, Sc and/or Fe at a respective level sufficient to induce a stress in the piezoelectric aluminum nitride layer in a range between about 150 MPa compressive stress and about 300 MPa tensile stress.

Abstract: A device includes a piezoelectric layer on a substrate and including a portion included in an acoustic resonator, a first conductive layer on the piezoelectric layer and including a first electrode of the acoustic resonator on a first side of resonator portion of the piezoelectric layer, and a second conductive layer on the piezoelectric layer and including a second electrode of the acoustic resonator on a second side of the resonator portion of the piezoelectric layer. An insulating layer is disposed on the second conductive layer and an interconnection metal layer is electrically connected to the second conductive layer or the first conductive layer and has a portion extending onto the insulating layer and overlapping a portion of the second conductive layer to provide a capacitor electrode of a capacitor coupled to the first electrode and/or the second electrode.

Abstract: A BAW resonator ladder topology pass-band filter can include a plurality of series branches each including BAW series resonators. A plurality of shunt branches can each include BAW shunt resonators, wherein the plurality of series branches are coupled to the plurality of shunt branches to provide the BAW resonator ladder topology pass-band filter. A high-impedance shunt branch can include a plurality of high-impedance BAW shunt resonators coupled together in-series to provide an impedance for the high-impedance shunt branch that is greater the other shunt branches in the BAW resonator ladder topology pass-band filter.

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

Abstract: A resonator circuit device. The present invention provides for improved resonator shapes using egg-shaped, partial egg-shaped, and asymmetrical partial egg-shaped resonator structures. These resonator shapes are configured to give less spurious mode/noise below the resonant frequency (Fs) than rectangular, circular, and elliptical resonator shapes. These improved resonator shapes also provide filter layout flexibility, which allows for more compact resonator devices compared to resonator devices using conventionally shaped resonators.