Abstract: The present invention discloses preparation of a reflective image component and application method thereof. A reflective image component in the present invention consists of a metallic semi-continuous thin film, a porous alumina film and a high reflective metal substrate. The structure is easy in preparation, low in cost, environmental friendly regarding preparing procedures and suitable for large-scale fabrication, which plays a significant role in developing a next generation of image component; the minimum pixel in the image obtained is able to reach nano level, much smaller than the pixel in most of the self-luminous screens at present; the image also provides the ability of reversible color transformations, which can be applied to information encryption and trademark decoration and the like.

Abstract: A gas sensor device includes gas sensors and switches. The switches are connected to the respective gas sensors in series. The gas sensors each include: a first conductive layer; a second conductive layer; a metal oxide layer disposed between the first conductive layer and the second conductive layer; and an insulation layer covering the first conductive layer, the second conductive layer, and the metal oxide layer and having an opening from which a portion of the second conductive layer is exposed. The resistance of the gas sensor is decreased when a gas containing a hydrogen atom comes into contact with the second conductive layer.

Abstract: An estimation method for a variable resistance element including (i) a first electrode, (ii) a second electrode, and therebetween (iii) a variable resistance layer in which a local region is formed which has resistive status that reversibly changes according to an electric pulse applied between the first electrode and the second electrode, the estimation method including: obtaining, when changes are made to the resistive status of the local region, measurement values each indicating a resistance state after one of the changes; and determining, based on a distribution of the obtained measurement values, an estimated amount of a physical parameter regarding structural characteristics of the local region by a calculation.

Abstract: A gas-detecting apparatus includes a gas sensor and a power supply circuit. The gas sensor includes: a first electrode; a second electrode; a metal oxide layer disposed between the first electrode and the second electrode; and an insulation film covering the first electrode, the second electrode, and the metal oxide layer. The insulation file having an opening from which a surface of the second electrode is exposed. The resistance value of the metal oxide layer decreases when gas containing hydrogen atoms comes into contact with the second electrode. The power supply circuit applies a predetermined voltage between the first electrode and the second electrode to increase the resistance value of the metal oxide layer before and/or after the decrease in the resistance value of the metal oxide layer.

Abstract: A gas-detecting apparatus includes a measurement circuit including a gas sensor and a measurement instrument and a decision circuit. Detection cells, included in the gas sensor, each include a first electrode, a second electrode having a surface exposed from an insulation layer, and a metal oxide layer disposed between the first electrode and the second electrode. The resistance values of the detection cells are each allowed to decrease by a contact of gas containing hydrogen atoms with the second electrode. The measurement instrument monitors the resistance values of the detection cells. The decision circuit decides whether the gas is detected or not based on at least one change of the resistance values.

Abstract: A gas sensor includes: a first conductive layer; a second conductive layer including a first region having a first thickness and a second region having a second thickness larger than the first thickness; a metal oxide layer disposed between the first conductive layer and the second conductive layer, the metal oxide layer including a bulk region and a local region surrounded by the bulk region, a degree of oxygen deficiency of the local region being higher than that of the bulk region; and an insulation layer covering the first conductive layer, the second region of the second conductive layer, and the metal oxide layer and not covering the first region of the second conductive layer.

Abstract: A hydrogen sensor includes: a first electrode; a second electrode; a metal oxide layer disposed between the first electrode and the second electrode and including a bulk area and a local area; a first insulation film covering the first electrode, the second electrode, and the metal oxide layer and having an opening reaching the second electrode; and a second insulation film being in contact with the second electrode in the opening.

Abstract: A gas sensor includes an insulation layer and detection cells covered with the insulation layer. Each of the plurality of detection cells includes: a first electrode; a second electrode having a surface exposed from the insulation layer; and a metal oxide layer disposed between the first electrode and the second electrode. In each of the detection cells, a resistance value of the metal oxide layer decreases with a response time, which is different in each of the detection cells, when a gas containing a hydrogen atom comes into contact with the second electrodes.

Abstract: A gas sensor includes a first electrode having a first main surface and a second main surface opposite to the first main surface; a second electrode having a third main surface facing the second main surface and a fourth main surface opposite to the third main surface; a metal oxide layer disposed between the first electrode and the second electrode, and being in contact with the second main surface and the third main surface; and an insulating film covering at least a part of the first electrode, a part of the second electrode, and at least a part of the metal oxide layer. At least a part of the fourth main surface is exposed to gas which contains a gas molecule including a hydrogen atom. A resistance value of the metal oxide layer decreases when the second electrode is in contact with the gas molecule.

Abstract: In a nonvolatile memory element, when a voltage value of an electric pulse has a relationship of V2>V1>0 V>V3>V4 and a resistance value of a variable resistance layer has a relationship of R3>R2>R4>R1, the resistance value of the variable resistance layer becomes: R2, when the electric pulse having a voltage value of V2 or greater is applied between electrodes; R4, when the electric pulse having a voltage value of V4 or smaller is applied between the electrodes; R3, when the resistance value of the variable resistance layer is R2 and the electric pulse having a voltage value of V3 is applied between the electrodes; and R1, when the resistance value of the variable resistance layer is R4 and the electric pulse having a voltage value of V1 is applied between the electrodes.

Abstract: A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range.

Abstract: In a driving method of a non-volatile memory element, the polarity of a write voltage pulse applied to change a variable resistance layer from a high-resistance state to a low-resistance state is such that an input/output terminal which is more distant from the variable resistance element becomes a source terminal, and when a first write voltage pulse is applied to change the variable resistance layer in the high-resistance state to the low-resistance state, a first gate voltage is applied to a gate terminal, while when a second write voltage pulse which is greater in absolute value of voltage than the first write voltage pulse is applied to change the variable resistance layer in an excess-resistance state to the low-resistance state, a second gate voltage which is smaller in absolute value than the first gate voltage is applied to the gate terminal.

Abstract: A nonvolatile memory device includes: a first electrode; a second electrode; and a variable resistance layer which includes: a first oxide layer including a first metal oxide; a second oxide layer located between and in contact with the first oxide layer and a second electrode including a second metal oxide and having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxide layer; and a local region located in the first oxide layer and the second oxide layer, having contact with the second electrode and no contact with the first electrode, and having a degree of oxygen deficiency higher than the degree of oxygen deficiency of the second oxide layer and different from the degree of oxygen deficiency of the first oxide layer.

Abstract: A variable resistance element including: a first electrode; a second electrode; and a variable resistance layer having a resistance value which reversibly changes according to electrical signals applied, wherein the variable resistance layer includes a first variable resistance layer comprising a first oxygen-deficient transition metal oxide, and a second variable resistance layer comprising a second transition metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first oxygen-deficient transition metal oxide, the second electrode has a single needle-shaped part at an interface with the second variable resistance layer, and the second variable resistance layer is interposed between the first variable resistance layer and the second electrode, is in contact with the first variable resistance layer and the second electrode, and covers the single needle-shaped part.

Abstract: A stacking structure in which a stacked body (21) including a first conductive layer (13), a semiconductor layer (17), and a second conductive layer (18) and an interlayer insulating film (16) are alternately stacked in parallel to a substrate, a plurality of columnar electrodes (12) arranged so as to penetrated through the stacking structure in a stacking direction, a variable resistance layer (14) which is disposed between the columnar electrode (12) and the first conductive layer (13) and which has a resistance value that reversibly changes according to an application of an electric signal are included. The variable resistance layer (14) is formed by oxidizing part of the first conductive layer (13). The variable resistance layer (14) and an insulating film for electrically separating the semiconductor layer (17) and the second conductive layer (18) from the columnar electrode (12) are simultaneously formed in a single oxidation process.

Abstract: A variable resistance nonvolatile memory element includes a first electrode, a second electrode, and a variable resistance layer including: a first oxide layer including a metal oxide having non-stoichiometric composition and including p-type carriers; a second oxide layer located between and in contact with the first oxide layer and a second electrode and including a metal oxide having non-stoichiometric composition and including n-type carriers; an oxygen reservoir region located in the first oxide layer, having no contact with the first electrode, and having an oxygen content atomic percentage higher than that of the first oxide layer; and a local region located in the second oxide layer, having contact with the oxygen reservoir region, and having an oxygen content atomic percentage lower than that of the second oxide layer.

Abstract: In a driving method of a non-volatile memory element, the polarity of a write voltage pulse applied to change a variable resistance layer from a high-resistance state to a low-resistance state is such that an input/output terminal which is more distant from the variable resistance element becomes a source terminal, and when a first write voltage pulse is applied to change the variable resistance layer in the high-resistance state to the low-resistance state, a first gate voltage is applied to a gate terminal, while when a second write voltage pulse which is greater in absolute value of voltage than the first write voltage pulse is applied to change the variable resistance layer in an excess-resistance state to the low-resistance state, a second gate voltage which is smaller in absolute value than the first gate voltage is applied to the gate terminal.

Abstract: A nonvolatile memory element includes: a first electrode; a second electrode; and a variable resistance layer comprising a metal oxide positioned between the first electrode and the second electrode. The variable resistance layer includes: a first oxide layer having a resistivity ?x, on the first electrode; a second oxide layer having a resistivity ?y (?x<?y), on the first oxide layer; a third oxide layer having a resistivity ?z (?y<?z), on the second oxide layer; and a localized region that is positioned in the third oxide layer and the second oxide layer to be in contact with the second electrode and not to be in contact with the first oxide layer, and is, in resistivity, lower than the third oxide layer and different from the second oxide layer.

Abstract: An estimation method for a variable resistance element including (i) a first electrode, (ii) a second electrode, and therebetween (iii) a variable resistance layer in which a local region is formed which has resistive status that reversibly changes according to an electric pulse applied between the first electrode and the second electrode, the estimation method including: obtaining, when changes are made to the resistive status of the local region, measurement values each indicating a resistance state after one of the changes; and determining, based on a distribution of the obtained measurement values, an estimated amount of a physical parameter regarding structural characteristics of the local region by a calculation.

Abstract: A method of driving a nonvolatile memory element including a variable resistance element having a state reversibly changing between low and high resistance states by an applied electrical signal and a transistor serially connected to the variable resistance element. The method including: setting the variable resistance element to the low resistance state by applying a first gate voltage to a gate of the transistor and applying a first write voltage negative with respect to a first electrode; and changing a resistance value of the transistor obtained in a low-resistance write operation, when a value of current passing through the variable resistance element in the setting of the low resistance state or a resistance value of the nonvolatile memory element in the case where the variable resistance element is in the low resistance state is outside a predetermined range.