Abstract: A method of forming a semiconductor structure having a first substrate capable of electrically and mechanically connecting to a second substrate includes providing a first substrate without a solder bump. A solder bump receiving metal is formed over a top interconnect metal of the first substrate. The solder bump receiving metal may include platinum, a platinum alloy, nickel, or a nickel alloy. A passivation layer is formed, wherein the passivation layer is not situated under any portion of the solder bump receiving metal. A window is formed exposing a portion of the solder bump receiving metal. The method may further include providing a second substrate with a second substrate solder bump. The second substrate solder bump may be mechanically and electrically connecting to the exposed portion of the solder bump receiving metal of the first substrate.

Abstract: A semiconductor structure has a substrate and a thermally-tunable photonics device in or over the substrate. A tantalum nitride (TaN) resistive heater is over the substrate and proximate to the thermally-tunable photonics device. The TaN resistive heater is configured to tune the thermally-tunable photonics device.

Abstract: One exemplary method of forming a semiconductor structure having a platinum-based solder body contact includes providing a semiconductor structure having a passivation layer over a surface thereof, the passivation layer having a window exposing a portion of a top metal pad, and forming a barrier metal stack over the passivation layer and the portion of the top metal pad, the barrier metal stack including a tantalum nitride (TaN) layer and a tantalum (Ta) layer. The method further includes forming a solder body contact layer comprising platinum (Pt) over the barrier metal stack, and patterning the solder body contact layer and the barrier metal stack to form the platinum-based solder body contact over the portion of the top metal pad.

Abstract: The present invention discloses a flexible shaft structure insulating wear particles by perfusion, which includes a flexible transmission shaft, a proximal holder is provided at one end of the flexible transmission shaft, a distal holder is provided at the other end of the flexible transmission shaft, a constraint insulator and an outer sheath tube are provided outside the flexible transmission shaft, and the constraint insulator sequentially includes an inner constraint layer, an insulation layer and an outer constraint layer from inside to outside; a perfusion inflow annular cavity is formed between the outer constraint layer and the outer sheath tube and between the outer constraint layer and the insulation layer, respectively, and a static sealed inner cavity is formed between the inner constraint layer and the insulation layer and between the inner constraint layer and the flexible transmission shaft, respectively; the proximal holder is provided with a perfusion inlet pipeline communicated with the perf

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over the patterned group III-V device. A liner stack having at least one metal liner is situated in each contact hole. Filler metals are situated over each liner stack and fill the contact holes. The patterned group device can be optically and/or electrically connected to group IV devices in the group IV substrate.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. Precursor stacks having at least one precursor metal are situated over at least one portion of the patterned group III-V device. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over each precursor stack. A filler metal is situated in each contact hole and over each precursor stack. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate. Additional contact holes in the blanket dielectric layer can be situated over the group IV devices and filled with the filler metals.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over the patterned group III-V device. A liner stack having at least one metal liner is situated in each contact hole. Filler metals are situated over each liner stack and fill the contact holes. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.

Abstract: In fabricating a semiconductor structure, a group IV substrate and a group III-V chiplet are provided. The group III-V chiplet is bonded to the group IV substrate, and patterned to produce a patterned group III-V device. A blanket dielectric layer is formed over the patterned group III-V device. A first contact hole is formed in the blanket dielectric layer over a first portion of the patterned group III-V device. A first liner stack and a first filler metal are subsequently formed in the first contact hole. A second contact hole is formed in the blanket dielectric layer over a second portion of the patterned group III-V device. A second liner stack and a second filler metal are subsequently formed in the second contact hole. A first bottom metal liner of the first liner stack can be different from a second bottom metal liner of the second liner stack.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over the patterned group III-V device. A liner stack having at least one metal liner is situated in each contact hole. Filler metals are situated over each liner stack and fill the contact holes. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. Precursor stacks having at least one precursor metal are situated over at least one portion of the patterned group III-V device. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over each precursor stack. A filler metal is situated in each contact hole and over each precursor stack. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate. Additional contact holes in the blanket dielectric layer can be situated over the group IV devices and filled with the filler metals.

Abstract: A semiconductor structure includes a group IV substrate and a patterned group III-V device over the group IV substrate. Precursor stacks having at least one precursor metal are situated over at least one portion of the patterned group III-V device. A blanket dielectric layer is situated over the patterned group III-V device. Contact holes in the blanket dielectric layer are situated over each precursor stack. A filler metal is situated in each contact hole and over each precursor stack. The patterned group III-V device can be optically and/or electrically connected to group IV devices in the group IV substrate. Additional contact holes in the blanket dielectric layer can be situated over the group IV devices and filled with the filler metals.

Abstract: In fabricating a semiconductor structure, a group IV substrate and a group III-V chiplet are provided. The group III-V chiplet is bonded to the group IV substrate, and patterned to produce a patterned group III-V device. A blanket dielectric layer is formed over the patterned group III-V device. A first contact hole is formed in the blanket dielectric layer over a first portion of the patterned group III-V device. A first liner stack and a first filler metal are subsequently formed in the first contact hole. A second contact hole is formed in the blanket dielectric layer over a second portion of the patterned group III-V device. A second liner stack and a second filler metal are subsequently formed in the second contact hole. A first bottom metal liner of the first liner stack can be different from a second bottom metal liner of the second liner stack.

Abstract: The present invention discloses a flexible shaft structure insulating wear particles by perfusion, which includes a flexible transmission shaft, a proximal holder is provided at one end of the flexible transmission shaft, a distal holder is provided at the other end of the flexible transmission shaft, a constraint insulator and an outer sheath tube are provided outside the flexible transmission shaft, and the constraint insulator sequentially includes an inner constraint layer, an insulation layer and an outer constraint layer from inside to outside; a perfusion inflow annular cavity is formed between the outer constraint layer and the outer sheath tube and between the outer constraint layer and the insulation layer, respectively, and a static sealed inner cavity is formed between the inner constraint layer and the insulation layer and between the inner constraint layer and the flexible transmission shaft, respectively; the proximal holder is provided with a perfusion inlet pipeline communicated with the perf

Abstract: This invention discloses a wet process of fabrication of fiber wall panel, which includes the following steps: 1) slurry making: mix nontimber type natural plant fiber slurry with grass family slurry according to 1:0˜1.5 dry weight ratio, and add water to dilute this slurry; 2) slurry storage: pour the mixed slurry into slurry storage tank and add water for dilution; 3) suction straining and forming: pour slurry into mold cavity for cold pressing, dewatering, and forming, to yield wet blanks; 4) hot pressing, forming, and drying: move the Wet blanks to the hot pressing mold for hot pressing and remove moisture generated during hot pressing, to yield fiber wall panel. Fiber Wall panel made by this process features environment friendliness and high strength.

Abstract: An interventional medical device and manufacturing method thereof. The interventional medical device comprises: a stent body (1); a surface of the stent body (1) being provided with a drug releasing structure (3), and drug in the drug releasing structure (3) being drug for suppressing proliferation of adventitial fibroblasts and a drug for suppressing proliferation of intimal and/or smooth muscle cells. In use, after interventional medical device is implanted into a human body, the drug for suppressing proliferation of adventitial fibroblasts carried thereon can promote the compensatory expansion of the vessel, and the drug for suppressing proliferation of intimal cells and/or smooth muscle cells carried thereon can suppress intimal proliferation of the vessel. The combination of the two kinds of drugs greatly reduces the occurrence rate of in-stent restenosis.

Abstract: A method for loading a medical appliance with a medicament and/or a polymer is disclosed, the medical appliance comprising one or more grooves or holes loaded with the medicament and/or polymer. The method comprising the steps of: 1) capturing an image of the grooves or holes of the medical appliance, wherein the image contains at least one complete pattern of the grooves or holes; 2) performing digital image processing on the captured image to obtain the pattern of the grooves or holes; 3) calculating a central position of the pattern of the grooves or holes, and determining an actual central position of the grooves or holes based on the central position; 4) adjusting a relative position of a loading device to the medical appliance to align an outlet of the loading device with the actual central position of the grooves or holes; and 5) opening the outlet of the loading device to load the grooves or holes. A device for loading a medical appliance with a medicament and/or a polymer is further disclosed.

Abstract: A method and a device for loading a medical appliance with a medicament and/or polymer includes capturing images of a plurality of grooves or holes of the medical appliance using an image capturing device; performing digital image processing on the image of each of the grooves or holes to obtain a pattern of each of the grooves or holes; calculating a central position of the pattern of each of the grooves or holes, and determining a loading position of each of the grooves or holes based on the central position; and adjusting a relative position between a loading device and the medical appliance to align an outlet of the loading device with the loading position of the medical appliance, and loading each of the grooves or holes with the medicament and/or polymer. The method and device can load the medical appliance with the medicament and/or polymer fast and efficiently.

Abstract: A stent for a bifurcated vessel includes a stent body (1) with two open ends (5, 6). The stent body (1) includes multiple sets of annular units (2) having multiple undulating rods (4) and connecting rods (3) positioned between adjacent annular units (2) and used to connect the adjacent annular units (2). At least one open end (6) of the stent body (1) has a slope structure.

Abstract: The present invention discloses an interventional medical device and methods of making the same. At least one coating layer is disposed on the outer surface of the interventional medical device and the material of the outmost layer of the coating layer is a sulfonate group-containing polymer. In the present invention, the material of the outmost layer of the interventional medical device is a sulfonate group-containing polymer. The polymer is endowed with a same surface property as that of heparin in addition to appropriate hydrophilicity due to the presence of the sulfonate group. After the interventional medical device is implanted into the human body, a hydrophilic surface is formed on the outer surface of the interventional medical device which is also negatively charged in the body fluid. Therefore, cells can easily adhere and grow on the outer surface thereof as a result of the enhanced cell compatibility.

Abstract: A method and a device for loading a medical appliance with a medicament and/or polymer includes capturing images of a plurality of grooves or holes of the medical appliance using an image capturing device; performing digital image processing on the image of each of the grooves or holes to obtain a pattern of each of the grooves or holes; calculating a central position of the pattern of each of the grooves or holes, and determining a loading position of each of the grooves or holes based on the central position; and adjusting a relative position between a loading device and the medical appliance to align an outlet of the loading device with the loading position of the medical appliance, and loading each of the grooves or holes with the medicament and/or polymer. The method and device can load the medical appliance with the medicament and/or polymer fast and efficiently.